| Patent Number |
Title Of Patent |
Date Issued |
| RE37354 |
Semiconductor laser with integral spatial mode filter |
September 4, 2001 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the hete |
| RE37051 |
Semiconductor gain medium with multimode and single mode regions |
February 13, 2001 |
| A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a |
| RE35215 |
Frequency converted laser diode and lens system therefor |
April 23, 1996 |
| A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode la |
| RE33722 |
Optical system with bright light output |
October 22, 1991 |
| An optical system producing bright light output for optical pumping, communications, illumination and the like in which one or more fiberoptic waveguides receive light from one or more diode lasers or diode laser bars and transmit the light to an output end where it is focused or collima |
| RE31806 |
Monolithic multi-emitting laser device |
January 15, 1985 |
| A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the opt |
| 6491420 |
Addressable vehicular lighting system |
December 10, 2002 |
| A vehicle with a plurality of individually addressable light sources, preferably semiconductor laser light sources or light emitting diodes, each of which produce a beam of light, are optically coupled to a fiber optic waveguide. The laser light sources are grouped together preferably |
| 6490044 |
Optimized interferometrically modulated array source |
December 3, 2002 |
| An improved interferometric modulator permits the reduction in size of optical transmitters. In one embodiment, the optical modulator includes amplifiers or attentuators as phase modulators. In another embodiment, two outputs from a combiner are fed to the modulator, thus avoiding the |
| 6414774 |
Infrared laser diode wireless local area network |
July 2, 2002 |
| An infrared laser diode wireless local area network for communication between spatially dispersed terminals such as computers which may be located in a single room or in adjacent rooms. The lasers may be tuned to emit at varying frequencies for wavelength multiplexing, or a plurality of |
| 6407855 |
Multiple wavelength optical sources |
June 18, 2002 |
| Optical pumping arrangements are provided for the broadband or multiple wavelength pumping of optical sources. Sources may be based on Raman gain media and may use multiple output couplers to couple out different wavelength ranges. Cascaded Raman resonator (CRR) configurations may also |
| 6392751 |
Optimized interferometrically modulated array source |
May 21, 2002 |
| An improved interferometric modulator permits the reduction in size of optical transmitters. In one embodiment, the optical modulator includes amplifiers or attentuators as phase modulators. In another embodiment, two outputs from a combiner are fed to the modulator, thus avoiding the |
| 6342405 |
Methods for forming group III-arsenide-nitride semiconductor materials |
January 29, 2002 |
| Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial gro |
| 6298187 |
High power fiber gain media system achieved through power scaling via multiplexing |
October 2, 2001 |
| Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of |
| 6275632 |
High power fiber gain media system achieved through power scaling via multiplexing |
August 14, 2001 |
| Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of |
| 6212310 |
High power fiber gain media system achieved through power scaling via multiplexing |
April 3, 2001 |
| Power scaling by multiplexing multiple fiber gain sources with different wavelengths, pulsing or polarization modes of operation is achieved through multiplex combining of the multiple fiber gain sources to provide high power outputs, such as ranging from tens of watts to hundreds of |
| 6152588 |
Addressable vehicular lighting system |
November 28, 2000 |
| A vehicle with a plurality of individually addressable light sources, preferably semiconductor laser light sources or light emitting diodes, each of which produce a beam of light, are optically coupled to a fiber optic waveguide. The laser light sources are grouped together preferably |
| 6130147 |
Methods for forming group III-V arsenide-nitride semiconductor materials |
October 10, 2000 |
| Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial gr |
| 6100546 |
III-V arsenide-nitride semiconductor |
August 8, 2000 |
| III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results |
| 6025942 |
Infrared laser diode wireless local area network |
February 15, 2000 |
| An infrared laser diode wireless local area network for communication between spatially dispersed terminals such as computers which may be located in a single room or in adjacent rooms. The lasers may be tuned to emit at varying frequencies for wavelength multiplexing, or a plurality of |
| 5933705 |
Passivation and protection of semiconductor surface |
August 3, 1999 |
| A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passi |
| 5926726 |
In-situ acceptor activation in group III-v nitride compound semiconductors |
July 20, 1999 |
| A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the reactor employing a reaction gas containing a p-type impurity and then annealing in-situ the ni |
| 5914978 |
Semiconductor gain medium with multimode and single mode regions |
June 22, 1999 |
| A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a |
| 5894492 |
Semiconductor laser with integral spatial mode filter |
April 13, 1999 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an narrow aperture end whoch may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain re |
| 5875053 |
Periodic electric field poled crystal waveguides |
February 23, 1999 |
| Several embodiments are described for induced electric field or E-field poling of QPM nonlinear crystal materials, such as LiNbO.sub.3, LiTaO.sub.3 and KTP, utilizing approaches which, for the most part, avoid the necessity of depositing or otherwise forming a series of spatially dis |
| 5870512 |
Optimized interferometrically modulated array source |
February 9, 1999 |
| An improved interferometric modulator permits the reduction in size of optical transmitters. In one embodiment, the optical modulator includes amplifiers or attentuators as phase modulators. In another embodiment, two outputs from a combiner are fed to the modulator, thus avoiding the |
| 5864574 |
Semiconductor gain medium with a light Divergence region that has a patterned resistive region |
January 26, 1999 |
| A semiconductor gain medium has an active gain region with a partially patterned radiation diverging region. The partially patterned radiation diverging region may be created with spatial resistive regions formed in a portion of the radiation diverging region having a narrower width than |
| 5799028 |
Passivation and protection of a semiconductor surface |
August 25, 1998 |
| A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passi |
| 5715268 |
Laser amplifiers with suppressed self oscillation |
February 3, 1998 |
| A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressi |
| 5713654 |
Addressable laser vehicle lights |
February 3, 1998 |
| A vehicle lighting system using individually addressable laser diodes or laser arrays coupled to a fiber optic waveguide. A plurality of laser light sources are grouped together and conveniently located on the vehicle. Each laser light source is individually addressable and produces |
| 5703897 |
Semiconductor laser with integral spatial mode filter |
December 30, 1997 |
| A semiconductor laser having a light amplifying diode heterostructure body having a single spatial mode aperture region or waveguide and a flared or tapered gain region having a narrow input end and wider output end provided in a resonant cavity, a portion of which cavity may be external |
| 5696779 |
Wavelength tunable semiconductor laser with mode locked operation |
December 9, 1997 |
| A wavelength tunable, semiconductor laser includes a gain region, e.g., a flared amplifier region, that permits light propagation with a diverging phase front along at least a portion of the gain region. Optical feedback defines a resonant laser cavity that has a first reflector at a fir |
| 5689123 |
III-V aresenide-nitride semiconductor materials and devices |
November 18, 1997 |
| III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available cry |
| 5677920 |
Upconversion fiber laser |
October 14, 1997 |
| An upconversion fiber laser uses a pump source which may be another fiber laser, such as a high power, diode-laser-pumped, fiber laser. The upconversion fiber laser includes an optical fiber whose core region is doped with an active lasing ionic species capable when optically pumped of |
| 5657153 |
Optical amplifier with complementary modulation signal inputs |
August 12, 1997 |
| In an optical transmission medium, such as a fiber amplifier, two optically distinguishable signals with complementary modulation are both inputted into the amplifying medium for encoding information, particularly a serial stream of digital data, or alternatively, redundant encoding of p |
| 5651018 |
Wavelength-stabilized, high power semiconductor laser |
July 22, 1997 |
| A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting |
| 5602864 |
Semiconductor laser with integral spatial mode filter |
February 11, 1997 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the hete |
| 5592503 |
Semiconductor laser with integral spatial mode filter |
January 7, 1997 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the hete |
| 5566196 |
Multiple core fiber laser and optical amplifier |
October 15, 1996 |
| A fiber laser or amplifier in which the optical fiber gain medium has two or more nonconcentric core regions, each of which is capable of gain or lasing when optically pumped. The fiber may be single clad or double clad, with multiple core regions embedded within a common cladding region |
| 5544184 |
Semiconductor illumination system with expansion matched components |
August 6, 1996 |
| A semiconductor laser that includes a monolithic submount with a light emitting source aligned along one side thereby defining a radiation path over which the emitted light propagates. The submount includes two notches that flank the light emitting source. A micro-lens is mounted adjacen |
| 5539571 |
Differentially pumped optical amplifer and mopa device |
July 23, 1996 |
| An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier havin |
| 5537432 |
Wavelength-stabilized, high power semiconductor laser |
July 16, 1996 |
| A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting |
| 5530709 |
Double-clad upconversion fiber laser |
June 25, 1996 |
| An upconversion fiber laser with a double-clad fiber is pumped with a laser-diode-based laser pump source, the inner cladding of the fiber forming a low transmission loss waveguide for the pump light. The central core of the fiber is doped with an active lasing ionic species capable of |
| 5520244 |
Micropost waste heat removal system |
May 28, 1996 |
| A cooling device formed in a thermally conductive substrate having a microstructure, such as a plurality of thermally conductive posts spaced apart by dimensions that induce capillary action in a liquid coolant. The posts extend away from the heated region and a space between the posts i |
| 5499261 |
Light emitting optical device with on-chip external cavity reflector |
March 12, 1996 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the hete |
| 5453641 |
Waste heat removal system |
September 26, 1995 |
| A cooling device formed in a thermally conductive substrate having at least one microchannel of dimensions that induce capillary action and a surface in thermal contact with a heated region. The microchannel has a longitudinal opening oriented away from the heated region and is supplied |
| 5392308 |
Semiconductor laser with integral spatial mode filter |
February 21, 1995 |
| A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the hete |
| 5337328 |
Semiconductor laser with broad-area intra-cavity angled grating |
August 9, 1994 |
| A semiconductor laser includes a grating that is disposed at an angle to cavity reflectors to coherently diffract a beam of light along a path that is at least partially laterally directed within the cavity. The grating period and orientation are selected such that a specified wavelength |
| 5321718 |
Frequency converted laser diode and lens system therefor |
June 14, 1994 |
| A compact semiconductor laser light source providing short wavelength (ultraviolet, blue or green) coherent light by means of frequency doubling of red or infrared light from a high power diode heterostructure. The high power diode heterostructure is a MOPA device having a single mode la |
| 5282080 |
Surface coupled optical amplifier |
January 25, 1994 |
| An optical amplifier with at least one high reflectivity facet oriented at a nonperpendicular angle to the amplifier's waveguide to couple light vertically through a top or bottom surface of the amplifier. Angled facets could be at just one end of the waveguide or at both ends of the |
| 5255332 |
NxN Optical crossbar switch matrix |
October 19, 1993 |
| An optical crossbar switch matrix for use in switching optical signals from a first set of optical fibers to a second set of optical fibers, in any order, which is characterized by having a matrix of rows and columns of diffraction gratings formed in a semiconductor heterostructure. Each |
| 5252513 |
Method for forming a laser and light detector on a semiconductor substrate |
October 12, 1993 |
| The present invention is an apparatus and method for providing detection of a laser output on a semiconductor wafer. A laser cavity and a detection cavity are formed on a semiconductor wafer in parallel such that light emitted laterally from the laser cavity is detected by the detection |
