| Patent Number |
Title Of Patent |
Date Issued |
| 7254428 |
Blood sugar level measuring apparatus |
August 7, 2007 |
| Blood sugar levels are measured non-invasively based on temperature measurement. Non-invasively measured blood sugar level values obtained by a temperature measurement scheme are corrected by blood oxygen saturation and blood flow volume, thereby stabilizing the measurement data. A guide |
| 7238973 |
Semiconductor member, manufacturing method thereof, and semiconductor device |
July 3, 2007 |
| An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon lay |
| 7164183 |
Semiconductor substrate, semiconductor device, and method of manufacturing the same |
January 16, 2007 |
| A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress to it. |
| 7156971 |
Capillary array and electrophoresis apparatus, and methods |
January 2, 2007 |
| A capillary array capable of being easily mounted on an electrophoresis apparatus without damaging the capillaries. The capillary array can include a plurality of capillaries that can be fixed via hollow electrodes on a load header in a matrix arrangement. The load header can be disp |
| 7081970 |
Information processing apparatus |
July 25, 2006 |
| An information processing apparatus includes an acquiring unit for acquiring information stored in a memory of a printing device connected through a bidirectional interface, and a selecting unit for selecting a printer driver corresponding to the information acquired by the acquiring |
| 7055246 |
Shaver |
June 6, 2006 |
| The present invention relates to the shaver capable of cutting deeply, provided with the outer blade having a plurality of the hair-guiding ports and the inner blade being adjacently located to the inner part of the outer blade and relatively moving against the said inner part, servi |
| 7049624 |
Member and member manufacturing method |
May 23, 2006 |
| A porous structure with high uniformity is provided even when evaluated at a high resolution (high evaluation standard) of several or several ten nm or less. By applying this porous structure to the manufacture of an SOI substrate, an SOI substrate which has an SOI layer with a small num |
| 7008701 |
Semiconductor member manufacturing method and semiconductor device manufacturing method |
March 7, 2006 |
| This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15'), and insulating layer (21) are sequentially formed |
| 6828214 |
Semiconductor member manufacturing method and semiconductor device manufacturing method |
December 7, 2004 |
| This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15'), and insulating layer (21) are sequentially formed on |
| 6769179 |
Shaver |
August 3, 2004 |
| The present invention relates to the shaver capable of cutting deeply, provided with the outer blade having a plurality of the hair-guiding ports and the inner blade being adjacently located to the inner part of the outer blade and relatively moving against the said inner part, serving |
| 6750980 |
Information processing apparatus and output apparatus |
June 15, 2004 |
| An information processing apparatus which outputs data to an electronic device. Information indicating a data processing ability of the electronic device is first obtained, whereupon data processing means is controlled so as to process the data output to the electronic device depending o |
| 6717693 |
Information processing apparatus and output apparatus |
April 6, 2004 |
| An information processing apparatus includes an acquiring unit for acquiring information from a printer connected through a bidirectional interface, and a control unit for controlling a display status of a virtual printer, which is displayed on a display screen and represents the pri |
| 6667812 |
Information processing apparatus with device control language based program selection |
December 23, 2003 |
| An information processing apparatus acquires identification information which specifies an interpreting program for interpreting a device control language, the specified interpreting program being operable in an external device connected to the information processing apparatus. It is |
| 6660606 |
Semiconductor-on-insulator annealing method |
December 9, 2003 |
| The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow |
| 6639327 |
Semiconductor member, semiconductor device and manufacturing methods thereof |
October 28, 2003 |
| In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing |
| 6633397 |
Output apparatus and output environment setting method in output apparatus |
October 14, 2003 |
| An output apparatus for forming output information on the basis of input information inputted from an external apparatus and outputting is constructed by a connector for connecting the output apparatus to the external apparatus so that they can communicate, a memory to store a data g |
| 6617378 |
Golf ball coating composition |
September 9, 2003 |
| A golf ball coating composition is obtained by incorporating in a base resin paint a fluorescent whitening agent which is a 7-triazinylamino-3-phenylcoumarin derivative. A golf ball painted on its cover surface with the coating composition is improved in weather resistance and bright |
| 6616552 |
Golf ball |
September 9, 2003 |
| In a golf ball including a core and a cover of at least one layer, the cover layer is formed of a heated mixture of an ionomer resin and a metal salt such as magnesium stearate. The heated mixture exhibits such a crystal melting behavior that when measured by DSC, the difference between |
| 6613678 |
Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and mu |
September 2, 2003 |
| A process for manufacturing a semiconductor substrate, comprising the step of preparing a first substrate which has a surface layer portion subjected to hydrogen annealing, the separation-layer formation step of implanting ions of hydrogen or the like into the first substrate from the si |
| 6606466 |
Print control apparatus indicating appropriate paper cassette for printing and method of same |
August 12, 2003 |
| A printer and method for enabling a user to select a paper cassette containing paper available for an appropriate finishing process when the user is to select another paper cassette to continue printing, after the print process has been interrupted due to an empty paper cassette. The |
| 6605518 |
Method of separating composite member and process for producing thin film |
August 12, 2003 |
| To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been |
| 6593211 |
Semiconductor substrate and method for producing the same |
July 15, 2003 |
| There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate.The forming method comprises a heat treatment step of heat-treating a porous silicon layer in an atmosphere |
| 6569748 |
Substrate and production method thereof |
May 27, 2003 |
| There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are |
| 6506665 |
Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate |
January 14, 2003 |
| An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single |
| 6468663 |
Semiconductor substrate and process for producing the same |
October 22, 2002 |
| A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the |
| 6413874 |
Method and apparatus for etching a semiconductor article and method of preparing a semiconductor |
July 2, 2002 |
| With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a d |
| 6407367 |
Heat treatment apparatus, heat treatment process employing the same, and process for producing s |
June 18, 2002 |
| A novel heat treatment apparatus is provided which comprises a first tube, a second tube placed therein, and a heater. A semiconductor article is heat treated in the second tube in an atmospheric gas. At least an internal face of the second tube is constructed from non-silicon oxide, |
| 6375738 |
Process of producing semiconductor article |
April 23, 2002 |
| A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one of the kind and the concentr |
| 6369905 |
Information processing apparatus and output apparatus |
April 9, 2002 |
| An information processing apparatus for communicating information with an information device. The information processing apparatus accesses virtual device image data representing an image of the information device, obtains status information representing a status of the information devic |
| 6350703 |
Semiconductor substrate and production method thereof |
February 26, 2002 |
| A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to form an ion-implanted layer in the |
| 6335269 |
Semiconductor substrate and method for producing the same |
January 1, 2002 |
| The present invention provides a semiconductor substrate comprising a non-porous monocrystalline layer with decreased crystal defects which is formed on a porous silicon layer, and a method of producing the substrate. The method of producing the substrate comprises a heat treatment step |
| 6326279 |
Process for producing semiconductor article |
December 4, 2001 |
| To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crysta |
| 6313014 |
Semiconductor substrate and manufacturing method of semiconductor substrate |
November 6, 2001 |
| A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatme |
| 6309945 |
Process for producing semiconductor substrate of SOI structure |
October 30, 2001 |
| A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the |
| 6290062 |
Packaging for sports equipment |
September 18, 2001 |
| Packaging for sports equipment has an enclosure and a hologram formed on at least a portion thereof for diffusely reflecting incident light. A marking layer is formed on the hologram and of an organic ink, an inorganic ink, or an ink containing a dye or pigment having the color attribute |
| 6254794 |
Etching solution for etching porous silicon, etching method using the etching solution and metho |
July 3, 2001 |
| A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove |
| 6246068 |
Semiconductor article with porous structure |
June 12, 2001 |
| A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is perform |
| 6238586 |
Etching solution for etching porous silicon, etching method using the etching solution and metho |
May 29, 2001 |
| A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove |
| 6221738 |
Substrate and production method thereof |
April 24, 2001 |
| There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are |
| 6180497 |
Method for producing semiconductor base members |
January 30, 2001 |
| A method of producing a semiconductor base member that can be used as a Silicon on Insulator (SOI) wafer is presented. To produce an SOI wafer, it is necessary to prepare a base member having a porous layer upon which a non porous layer is formed. To make the pore size distribution of a |
| 6171982 |
Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate |
January 9, 2001 |
| An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single |
| 6171512 |
Etching solution for etching porous silicon, etching method using the etching solution and metho |
January 9, 2001 |
| A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove |
| 6143629 |
Process for producing semiconductor substrate |
November 7, 2000 |
| In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the |
| 6143628 |
Semiconductor substrate and method of manufacturing the same |
November 7, 2000 |
| A manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer and a wafer manufactured by that method are provided. After wafer bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosi |
| 6136684 |
Semiconductor substrate and process for production thereof |
October 24, 2000 |
| A process for producing a semiconductor substrate is provided which comprises providing a first member having a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer grown thereon, laminating the nonporous silicon layer of the first member onto a second m |
| 6121117 |
Process for producing semiconductor substrate by heat treating |
September 19, 2000 |
| A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere. |
| 6106613 |
Semiconductor substrate having compound semiconductor layer, process for its production, and ele |
August 22, 2000 |
| In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with its pores having been sealed at |
| 6103598 |
Process for producing semiconductor substrate |
August 15, 2000 |
| A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous |
| 6048115 |
Printing apparatus and printing processing method |
April 11, 2000 |
| A printing apparatus and a printing processing method are provided in which content of print information is discriminated. A variable is initialized if the result of discrimination indicates the start of a printing job, and the variable is counted up of the result of discrimination indic |
| 5970361 |
Process for producing semiconductor device having porous regions |
October 19, 1999 |
| Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non- |
