| Patent Number |
Title Of Patent |
Date Issued |
| 7211517 |
Semiconductor device and method that includes reverse tapering multiple layers |
May 1, 2007 |
| A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film 14, a first conductive layer 15 and a first insulating film 16 on a semiconductor layer 13 provided on an insulating film 12; (b) selectively removing the |
| 6975001 |
Semiconductor device and method of fabricating the same |
December 13, 2005 |
| A semiconductor device includes (a) a semiconductor layer formed on an electrically insulating layer, (b) a gate insulating film formed on the semiconductor layer, (c) a gate electrode formed on the gate insulating film, and (d) a field insulating film formed on the semiconductor layer |
| 6933569 |
SOI MOSFET |
August 23, 2005 |
| A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both |
| 6916695 |
Semiconductor device and method of manufacturing the same |
July 12, 2005 |
| One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode 109 of a p-channel MISFET is constituted of a titanium nitride fil |
| 6483151 |
Semiconductor device and method of manufacturing the same |
November 19, 2002 |
| One object of the present invention is to suppress a threshold voltage of at least an n-channel MISFET using a nitride of a high melting point metal at it's gate electrode. In order to achieve the object, a gate electrode 109 of a p-channel MISFET is constituted of a titanium nitride fil |
| 6077437 |
Device and method for recovering and reusing a polishing agent |
June 20, 2000 |
| A polishing agent recovery and reuse method and device for the same removes large impurities by a filtration device, concentrates by an ultrafiltration device, and continuously recovers polishing agent. Polishing agent used in polishing a semiconductor board or a coating formed on to |
