| Patent Number |
Title Of Patent |
Date Issued |
| 7329590 |
Method for depositing nanolaminate thin films on sensitive surfaces |
February 12, 2008 |
| The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the dep |
| 7144809 |
Production of elemental films using a boron-containing reducing agent |
December 5, 2006 |
| The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises |
| 6902763 |
Method for depositing nanolaminate thin films on sensitive surfaces |
June 7, 2005 |
| The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the dep |
| 6863727 |
Method of depositing transition metal nitride thin films |
March 8, 2005 |
| This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material |
| 6852635 |
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
February 8, 2005 |
| Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene meta |
| 6821889 |
Production of elemental thin films using a boron-containing reducing agent |
November 23, 2004 |
| The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises int |
| 6800552 |
Deposition of transition metal carbides |
October 5, 2004 |
| The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carb |
| 6794287 |
Process for growing metal or metal carbide thin films utilizing boron-containing reducing agents |
September 21, 2004 |
| A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, whe |
| 6664192 |
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
December 16, 2003 |
| Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene meta |
| 6599572 |
Process for growing metalloid thin films utilizing boron-containing reducing agents |
July 29, 2003 |
| A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, whe |
| 6482262 |
Deposition of transition metal carbides |
November 19, 2002 |
| The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carb |
| 6475276 |
Production of elemental thin films using a boron-containing reducing agent |
November 5, 2002 |
| The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises int |
| 6391785 |
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
May 21, 2002 |
| Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene meta |
