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Jeong-Do Ryu Patents |
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Inventor: Ryu; Jeong-Do
Address: Gyeonggi-do, KR
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7129174 |
Methods of fabricating a semiconductor substrate for reducing wafer warpage |
October 31, 2006 |
| Methods of fabricating a semiconductor device can include forming at least one layer on a first and a second side of a semiconductor substrate. Portions of the at least one layer may be removed on the first side of the semiconductor substrate to form a pattern of the at least one layer |
| 6930062 |
Methods of forming an oxide layer in a transistor having a recessed gate |
August 16, 2005 |
| A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Rel |
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