| Patent Number |
Title Of Patent |
Date Issued |
| 7402466 |
Strained silicon CMOS on hybrid crystal orientations |
July 22, 2008 |
| Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semicond |
| 7364958 |
CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct waf |
April 29, 2008 |
| A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive interface is provided. Also provided are the hybrid substrate prod |
| 7315065 |
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
January 1, 2008 |
| A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a |
| 7314790 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain |
January 1, 2008 |
| The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term "biaxial compressive stress" is used herein to describe the net |
| 7253034 |
Dual SIMOX hybrid orientation technology (HOT) substrates |
August 7, 2007 |
| This invention provides a separation by implanted oxygen (SIMOX) method for forming planar hybrid orientation semiconductor-on-insulator (SOI) substrates having different crystal orientations, thereby making it possible for devices to be fabricated on crystal orientations providing o |
| 7172930 |
Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
February 6, 2007 |
| A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers i |
| 7161169 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain |
January 9, 2007 |
| The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term "biaxial compressive stress" is used herein to describe the net |
| 7125785 |
Mixed orientation and mixed material semiconductor-on-insulator wafer |
October 24, 2006 |
| The present disclosure relates, generally, to a semiconductor substrate with a planarized surface comprising mixed single-crystal orientation regions and/or mixed single-crystal semiconductor material regions, where each region is electrically isolated. In accordance with one embodiment |
| 7087965 |
Strained silicon CMOS on hybrid crystal orientations |
August 8, 2006 |
| Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semicond |
| 7084460 |
Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates |
August 1, 2006 |
| A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a |
| 7023057 |
CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct waf |
April 4, 2006 |
| A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive or insulating interface is provided. Also provided are the hybrid |
| 7023055 |
CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct waf |
April 4, 2006 |
| A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive interface is provided. Also provided are the hybrid substrate prod |
