| Patent Number |
Title Of Patent |
Date Issued |
| 4360142 |
Method of forming a solder interconnection capable of sustained high power levels between a semi |
November 23, 1982 |
| A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:forming a conductive layer that is adherent to the semiconductor device passivating layer,forming a relatively thick layer of a material having a high thermal co |
| 4312012 |
Nucleate boiling surface for increasing the heat transfer from a silicon device to a liquid cool |
January 19, 1982 |
| The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially forming lattice defects on the ba |
| 4290079 |
Improved solder interconnection between a semiconductor device and a supporting substrate |
September 15, 1981 |
| A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:a conductive layer that is adherent to the semiconductor device passivating layer,a relatively thick layer of a material having a high thermal conductivity,a barrier layer that protects |
| 4053942 |
Device for removing low level contaminants from a liquid |
October 11, 1977 |
| A device for removing contaminant impurities, particularly contaminants existing at very low levels, from a liquid, including a heating element at least partially immersible in the liquid, a confinement means at least partially immersible in the liquid for maintaining a pulsating bubble |
