A characterization method for a device under test includes applying a bias voltage to a test circuit. The test circuit includes a first transistor coupled to the device under test, a second transistor coupled to the device under test and to the first transistor. A third transistor is
A multiplexed transistor characterization and modeling structure for testing a plurality of transistors, The characterization and modeling structure comprises a common substrate pad, a common source pad, a plurality of drain pads, and a plurality of gate pads. The characterization an
