| Patent Number |
Title Of Patent |
Date Issued |
| 7018928 |
Plasma treatment method to reduce silicon erosion over HDI silicon regions |
March 28, 2006 |
| A method for reducing the loss of silicon in a plasma assisted photoresist etching process including providing a silicon substrate including a polysilicon gate structure; masking a portion of the silicon substrate with photoresist to carry out an ion implantation process for forming |
| 6929713 |
In-situ photoresist removal by an attachable chamber with light source |
August 16, 2005 |
| A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer which is selectively exposed and |
| 6808589 |
Wafer transfer robot having wafer blades equipped with sensors |
October 26, 2004 |
| A wafer transfer robot for a wafer processing system, such as a wet bench system, and a method for utilizing the robot. The wafer transfer robot can be constructed by a robot arm that is equipped with a plurality of wafer blades each adapted for picking-up and carrying one of a plurality |
| 6664194 |
Photoexposure method for facilitating photoresist stripping |
December 16, 2003 |
| There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask layer, to thus form a processed |
| 6660528 |
Method for monitoring contaminating particles in a chamber |
December 9, 2003 |
| A method for determining the number of contaminating particles in a process chamber is described. While the method is particularly suited for detecting particles in a metal etch chamber, the present invention novel method can be utilized in any other semiconductor process chambers as lon |
| 6642150 |
Method for testing for blind hole formed in wafer layer |
November 4, 2003 |
| A new method for detecting blind holes in the contact layer of a multi-chip semiconductor test wafer makes use of the fact that if the hole is not a blind hole, a subsequent etch step extends the hole a predetermined distance into the layer immediately underlying the contact layer. After |
| 6500725 |
Microelectronic fabrication method providing alignment mark and isolation trench of identical de |
December 31, 2002 |
| Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed simultaneously within the substrate an alignment mark and an isolation trench formed employing a single etch method and to an identical depth within the substrate. Ther |
| 6429142 |
In-situ photoresist removal by an attachable chamber with light source |
August 6, 2002 |
| A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer which is selectively exposed and |
| 6251794 |
Method and apparatus with heat treatment for stripping photoresist to eliminate post-strip photo |
June 26, 2001 |
| A method for removing a photoresist layer from a semiconductor substrate following a conventional dry etching step. A first wet chemical treatment strips the photoresist. A second dry ash with oxygen plasma completes the photoresist removal. To assure complete removal of photoresist imbe |
| 6103596 |
Process for etching a silicon nitride hardmask mask with zero etch bias |
August 15, 2000 |
| A method for controlling the mask bias of a photoresist mask is described whereby a polymer coating is formed over the patterned photoresist mask immediately prior to etching the mask's pattern into a subjacent layer. The polymer coating is formed by treatment of the photoresist mask wit |
| 5840203 |
In-situ bake step in plasma ash process to prevent corrosion |
November 24, 1998 |
| The present invention describes a modified dry etching, or plasma ashing, method for removing photoresist residue which avoids corrosion of metal electrodes. The wafers are placed in a batch type plasma chamber and a radio frequency plasma is established while oxygen gas is flowed throug |
