A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the performance of a pla
A method of forming a liquid crystal display device includes forming an amorphous silicon layer over a substrate and forming a light reflecting layer only over a first portion of the amorphous silicon layer. The amorphous silicon layer is then irradiated with a laser to convert it to
A process for cleaning a silicon surface. First, a silicon surface is cleaned with an oxidant solution. Next, the silicon surface is rinsed with HF vapor or liquid and then with the silicon surface with hydrogen water or deionized water under megasonic agitation. Finally, the silicon
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As we
A low temperature polysilicon thin film transistor and a method of forming the polysilicon layer inside the thin film transistor. An amorphous silicon layer is formed over a panel. The panel has a display region and a peripheral circuit region. A metallic layer is formed over a portion o
