| Patent Number |
Title Of Patent |
Date Issued |
| 6816531 |
High-power, kink-free, single mode laser diodes |
November 9, 2004 |
| A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion exten |
| 6307873 |
Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly l |
October 23, 2001 |
| A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of |
| 6272162 |
Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly l |
August 7, 2001 |
| A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of |
| 6181721 |
Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly l |
January 30, 2001 |
| A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of |
| 6148014 |
Visible wavelength semiconductor optoelectronic device with a high power broad, significantly la |
November 14, 2000 |
| A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of |
| 6148013 |
Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly l |
November 14, 2000 |
| A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of |
| 5793521 |
Differentially patterned pumped optical semiconductor gain media |
August 11, 1998 |
| An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the |
| 5715268 |
Laser amplifiers with suppressed self oscillation |
February 3, 1998 |
| A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressi |
| 5539571 |
Differentially pumped optical amplifer and mopa device |
July 23, 1996 |
| An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier havin |
