| Patent Number |
Title Of Patent |
Date Issued |
| 7282407 |
Semiconductor memory device and method of manufacturing for preventing bit line oxidation |
October 16, 2007 |
| A semiconductor memory device and method of manufacturing a semiconductor memory device that prevents oxidation of the bit lines caused by misalignment which may occur when patterning a storage electrode. An oxidation preventing layer, such as a nitride layer, is formed over the bit |
| 7180680 |
High magnification zoom lens system |
February 20, 2007 |
| A high magnification zoom lens is provided. The zoom lens includes a first lens group including a single positive lens and having a positive refractive power, a second lens group having a negative refractive power, a third lens group having the positive refractive power, a fourth lens |
| 7173769 |
Zoom lens optical system |
February 6, 2007 |
| Provided is a zoom lens optical system suitable for cameras using solid state imaging devices, which is designed compact, has a high zooming ratio and telecentricity, and compensates for color aberration. The zoom lens optical system includes a first lens group having a positive refr |
| 7106522 |
Zoom lens |
September 12, 2006 |
| The present invention is directed to a zoom lens which includes, in order from an object side: a first lens group having a negative refractive power; a second lens group having a positive refractive power; and a third lens group having a positive refractive power. While zooming from a |
| 6917479 |
Photographing lens |
July 12, 2005 |
| The present invention is directed to a photographing lens containing, in order from an object side: a first lens having a positive refractive power and a convex surface facing the object side; a second lens having a negative refractive power; a third lens having a positive refractive |
| 6913953 |
Semiconductor device capable of preventing moisture absorption of fuse area thereof and method f |
July 5, 2005 |
| A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is fo |
| 6853498 |
Zoom lens |
February 8, 2005 |
| The zoom lens comprises, in order from an object side: a first lens group having a negative refractive power, the first lens group including a first lens having a negative refractive power, and a second lens having a positive refractive power; a second lens group having a positive re |
| 6844240 |
Semiconductor device having trench isolation |
January 18, 2005 |
| A structure having trench isolation which protects a nitride liner in the trench during subsequent plasma processing. The structure includes a trench formed in a semiconductor substrate, the trench having sidewalls and a bottom. A thermal oxide layer is formed on the bottom and sidewalls |
| 6777343 |
Method of forming contacts for a bit line and a storage node in a semiconductor device |
August 17, 2004 |
| A method of forming self-aligned contact holes in an oxide layer to expose a semiconductor substrate between adjacent gate lines. The gate lines are formed such that a spacing between adjacent gate lines in the storage node contact region is equal to or greater than a spacing between adj |
| 6710934 |
Compact zoom lens system |
March 23, 2004 |
| Disclosed is a zoom lens system. The zoom lens system comprises: a first lens group of a negative refractive power, the first lens group comprising at least one lens of a negative refractive power and at least one lens of a positive refractive power, a second lens group of a positive ref |
| 6552761 |
Back light for a liquid crystal display device |
April 22, 2003 |
| An apparatus for fixing an optical film used in a back light to an outer frame of the back light. In the back light, a protrusion protrudes from a frame rim of the outer frame. A film extension extends from one side edge of the optical film and is placed on the surface of the frame rim n |
| 6538126 |
Hepatitis C diagnostics and vaccines |
March 25, 2003 |
| The present invention provides polynucleotides derived from cDNA of novel type of hepatitis C virus named Korean type hepatitis C virus (KHCV), polypeptides encoded therein, and antibodies directed against the polypeptides; and also provide diagnostics and vaccines employing any of t |
| 6525398 |
Semiconductor device capable of preventing moisture-absorption of fuse area thereof |
February 25, 2003 |
| A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is fo |
| 6511919 |
Contacts for a bit line and a storage node in a semiconductor device |
January 28, 2003 |
| A method of forming self-aligned contact holes in an oxide layer to expose a semiconductor substrate between adjacent gate lines. The gate lines are formed such that a spacing between adjacent gate lines in the storage node contact region is equal to or greater than a spacing between adj |
| 6482696 |
Method of forming storage nodes in a DRAM |
November 19, 2002 |
| A method of forming capacitor over bit line storage nodes in dynamic random access memory cell includes forming a multi-layered structure having at least two silicon oxide layers as a thick molding layer, e.g., to a thickness of more than 8000 .ANG.. The at least two silicon oxide layers |
| 6326282 |
Method of forming trench isolation in a semiconductor device and structure formed thereby |
December 4, 2001 |
| A method of forming trench isolation which protects a nitride liner in the trench during subsequent plasma processing, by forming a high temperature oxide layer, such as an HTO oxide layer or LP-TEOS oxide layer. A trench mask is formed on a semiconductor substrate to define a trench for |
| 6239022 |
Method of fabricating a contact in a semiconductor device |
May 29, 2001 |
| A method for forming a contact plug formed of polysilicon and a method for manufacturing a semiconductor device using the same are provided. The contact plug is formed by etching back polysilicon which fills a contact hole and is deposited on an interlayer dielectric film using a gas mix |
| 6228762 |
Methods for forming contact holes having sidewalls with smooth profiles |
May 8, 2001 |
| A method for forming an electronic device includes the steps of forming a first insulating layer on a substrate, forming a patterned conductive layer on the first insulating layer, and forming a second insulating layer on the first insulating layer and on the patterned conductive layer. |
| 6171926 |
Methods for fabricating integrated circuit capacitor electrodes using first and second insulatin |
January 9, 2001 |
| Integrated circuit capacitor lower electrodes are fabricated by forming a plurality of spaced-apart contact pads on an integrated circuit substrate. A first insulating layer is formed on the integrated circuit substrate including on the contact pads. A plurality of spaced-apart conductiv |
| 6140242 |
Method of forming an isolation trench in a semiconductor device including annealing at an increa |
October 31, 2000 |
| A method of forming an isolation trench in a semiconductor device results in increasing trench isolation characteristics by optimizing an annealing temperature thereby removing substrate defects caused during the etching of a semiconductor substrate and relieving stress thereby improving |
| 6040596 |
Dynamic random access memory devices having improved peripheral circuit resistors therein |
March 21, 2000 |
| A semiconductor memory device has a cell array portion for storing data and a peripheral circuit portion for driving a plurality of unit cells of the cell array portion on a same semiconductor substrate. The device comprises a plate electrode formed in the cell array portion; and a resis |
| 5969879 |
Compact zoom lens system |
October 19, 1999 |
| Disclosed is a compact zoom lens system. The lens systems includes a first lens group having positive refractive power; a second lens group having negative refractive power; a third lens group having positive refractive power; and a fourth lens group having positive refractive power. The |
| 5837595 |
Methods of forming field oxide isolation regions with reduced susceptibility to polysilicon resi |
November 17, 1998 |
| Methods of forming field oxide isolation regions in a semiconductor substrate include the steps of exposing residual polysilicon defects contained within preliminary field oxide isolation regions and then performing a cleaning step to etch and reduce the size of the exposed defects ( |
| 5447878 |
Method for manufacturing a semiconductor memory device having a capacitor with increased effecti |
September 5, 1995 |
| A storage electrode of a capacitor of a semiconductor memory device and a method for manufacturing the same are disclosed. A first electrode of the capacitor comprises a main electrode having a plurality of microtrenches and micropillars formed therein, an outer wall surrounding the |
| 5320976 |
Method for manufacturing VLSI semiconductor device |
June 14, 1994 |
| A method for manufacturing a VLSI semiconductor memory device, in which a cell transistor is formed in the cell array section of a semiconductor substrate, successively, a cell capacitor. Then, a transistor is formed in the periphery circuit section of the substrate. Therefore, access |
| 5296399 |
Method for manufacturing a narrowed sidewall spacer in a peripheral circuit of a ULSI semiconduc |
March 22, 1994 |
| A method for manufacturing ULSI semiconductor memory devices is disclosed which uses an insulating film to form a side wall spacer of the gate electrodes of transistors formed in the peripheral circuit section of a memory device. This scheme prevents surface deterioration of the unde |
