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Si-hyun Park Patents
Inventor:
Park; Si-hyun
Address:
Seoul, KR
No. of patents:
2
Patents:




Patent Number Title Of Patent Date Issued
6990134 GaN series surface-emitting laser diode having spacer for effective diffusion of holes between P January 24, 2006
A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR
6754245 GaN series surface-emitting laser diode having spacer for effective diffusion of holes between p June 22, 2004
A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR


 
 
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