| Patent Number |
Title Of Patent |
Date Issued |
| 7354834 |
Semiconductor devices and methods to form trenches in semiconductor devices |
April 8, 2008 |
| Semiconductor devices and methods of fabricating the same are disclosed. One example method may include forming sequentially a pad oxide film and a silicon nitride film on an entire surface of a semiconductor substrate, forming the trench by etching the silicon nitride film and the s |
| 7348247 |
Semiconductor devices and methods of manufacturing the same |
March 25, 2008 |
| Semiconductor devices and methods of manufacturing the same are disclosed. A disclosed semiconductor device comprises a semiconductor substrate; a gate formed on the semiconductor substrate; a gate oxide layer interposed between the semiconductor substrate and the gate; and source and dr |
| 7307024 |
Flash memory and fabrication method thereof |
December 11, 2007 |
| A flash memory and a fabrication method thereof, which is capable of improving a whole capacitance of the flash memory by forming a tunneling oxide and a floating gate only in a portion where injection of electrons occurs. A flash memory wherein a tunneling oxide and a floating gate are |
| 7217633 |
Methods for fabricating an STI film of a semiconductor device |
May 15, 2007 |
| Methods for fabricating a shallow trench isolation (STI) of a semiconductor device are disclosed. A disclosed method includes: forming a trench on a semiconductor substrate, forming an oxide layer on the semiconductor substrate and the trench, forming a photoresist pattern on the oxi |
| 7199041 |
Methods for fabricating an interlayer dielectric layer of a semiconductor device |
April 3, 2007 |
| Methods for fabricating an interlayer dielectric layer of a semiconductor device are disclosed. An illustrated method comprises forming a metallic interconnect on a substrate; depositing an SRO layer on the metallic interconnect while the substrate is located in a chamber; and forming an |
| 7199012 |
Method of forming a trench in a semiconductor device |
April 3, 2007 |
| A method for forming a trench in a semiconductor device is disclosed. An example method forms a pad oxide film and a silicon nitride film on a semiconductor substrate, selectively etches the silicon nitride film and the pad oxide film on a region to be formed with a trench, and implants |
| 7164173 |
Method for manufacturing MOS transistor and semiconductor device employing MOS transistor made u |
January 16, 2007 |
| A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolation oxidation film |
| 7122440 |
Semiconductor device and fabrication method thereof |
October 17, 2006 |
| A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes |
| 7091076 |
Method for fabricating semiconductor device having first and second gate electrodes |
August 15, 2006 |
| A method of fabricating a gate electrode used for more flexible device design and higher device integrity is disclosed. A disclosed method comprises: forming a first gate electrode by etching the first insulating layer and the first polysilicon layer; forming a second insulating layer |
| 7037858 |
Method for manufacturing semiconductor device including an ozone process |
May 2, 2006 |
| A method for manufacturing a semiconductor device includes forming a barrier layer on an individual device formed on a semiconductor substrate and including a MOS transistor. An ozone process is performed on the barrier layer. A pre-metal dielectric (I'MD) layer is then formed on the |
| 7029998 |
Formation method of gate electrode in a semiconductor process |
April 18, 2006 |
| The present invention is directed to a method of forming a gate electrode in a semiconductor device, which is capable of reducing a line width of the gate electrode by performing a photolithography process after defining a wide region on which a gate electrode is located on a photore |
| 6946374 |
Methods of manufacturing flash memory semiconductor devices |
September 20, 2005 |
| A manufacturing method for fabricating flash memory semiconductor devices is disclosed. According to one example, the manufacturing method may include: forming a trench on a silicon substrate by forming a photoresist pattern on the silicon substrate and performing an etching process usin |
| 6902968 |
Method for manufacturing a MOS transistor that prevents contact spiking and semiconductor device |
June 7, 2005 |
| A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolation oxidation film |
| 6841471 |
Fabrication method of semiconductor device |
January 11, 2005 |
| A fabrication method of a semiconductor device includes forming an interlayer dielectric film over an entire surface of a semiconductor substrate that includes a lower line. A barrier layer having an etching rate that is lower than an etching rate of the interlayer dielectric film is |
| 6794702 |
Semiconductor device and fabrication method thereof |
September 21, 2004 |
| A semiconductor device and a fabrication method thereof in which the semiconductor device includes capacitors having a metal/insulator/metal (MIM) structure are disclosed. The method includes forming an interlayer insulating film on a structure of a semiconductor substrate that exposes |
