| Patent Number |
Title Of Patent |
Date Issued |
| 6791113 |
Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer |
September 14, 2004 |
| The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of |
| 6607965 |
Methods of forming capacitors |
August 19, 2003 |
| The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of |
| 6583441 |
Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer |
June 24, 2003 |
| The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of |
| 6562684 |
Methods of forming dielectric materials |
May 13, 2003 |
| The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of |
