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Satoshi Onai Patents |
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Inventor: Onai; Satoshi
Address: Gunma, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7135380 |
Method for manufacturing semiconductor device |
November 14, 2006 |
| In a conventional method for manufacturing a semiconductor device, there are problems that a concave part is formed in a formation region of an isolation region, no flat surface is formed in the isolation region, and a wiring layer is disconnected above the concave part. In a method for |
| 6875881 |
Preparation of branched tetrasiloxane |
April 5, 2005 |
| A branched tetrasiloxane is prepared by preforming a liquid mixture of a disiloxane compound, an alcohol and an acid catalyst, adding a trialkoxysilane compound to the mixture for reaction, and adding water to the reaction mixture for co-hydrolysis, thereby forming a branched tetrasi |
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