| Patent Number |
Title Of Patent |
Date Issued |
| 7423902 |
Storage device and semiconductor apparatus |
September 9, 2008 |
| A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the low |
| 7372718 |
Storage and semiconductor device |
May 13, 2008 |
| A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high |
| 7345908 |
Memory device |
March 18, 2008 |
| The present invention is to provide a memory device including: a plurality of memory cells that each include a memory element having a memory layer and first and second electrodes that sandwich the memory layer, the plurality of memory cells being divided into memory blocks of m columns |
| 7336520 |
Storage device and semiconductor apparatus |
February 26, 2008 |
| A storage device includes a storage element having first and second terminals that cause a first electrical characteristic change when an electric signal of a first threshold level or higher is applied and that cause a second electrical characteristic change, which is asymmetrical to |
| 7242606 |
Storage apparatus and semiconductor apparatus |
July 10, 2007 |
| A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and |
| 7221600 |
Arithmetic circuit integrated with a variable resistance memory element |
May 22, 2007 |
| An arithmetic circuit is provided having a compact and high-speed logic-in-memory wherein various operations are performed. The arithmetic circuit includes a memory element having a variable resistance element R in which the state of resistance changes reversibly between the state of |
| 7209379 |
Storage device and semiconductor device |
April 24, 2007 |
| A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and app |
| 7130224 |
Composite storage circuit and semiconductor device having the same composite storage circuit |
October 31, 2006 |
| An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by stori |
| 7020010 |
Magnetic storage apparatus using ferromagnetic tunnel junction devices |
March 28, 2006 |
| A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, |
| 4827454 |
Semiconductor memory device |
May 2, 1989 |
| A semiconductor memory device, which can be maintained free from malfunction despite generation of current noise due to output signal variation in a output buffer circuit, is equipped with a switch in the input stage of the output buffer circuit, and the switch is so controlled as to |
