| Patent Number |
Title Of Patent |
Date Issued |
| 7355212 |
Light emitting element |
April 8, 2008 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {ci |
| 7221002 |
Light emitting element, method of manufacturing the same, and semiconductor device having light |
May 22, 2007 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {ci |
| 7179671 |
Light emitting element, method of manufacturing the same, and semiconductor device having light |
February 20, 2007 |
| A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, |
| 7138665 |
Light emitting element, method of manufacturing the same, and semiconductor device having light |
November 21, 2006 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {ci |
| 7138664 |
Semiconductor device having a light emitting element |
November 21, 2006 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {ci |
| 7135714 |
Light emitting element, method of manufacturing the same, and semiconductor device having light |
November 14, 2006 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {ci |
| 7122446 |
Semiconductor light-emitting element |
October 17, 2006 |
| Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently |
| 7110061 |
Image display device and light emission device |
September 19, 2006 |
| An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversi |
| 6924163 |
Semiconductor light emitting device and its manufacturing method |
August 2, 2005 |
| Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type G |
| 6864627 |
Image display device and light emission device |
March 8, 2005 |
| An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversi |
| 6825502 |
Light emitting element, method of manufacturing the same, and semiconductor device having light |
November 30, 2004 |
| An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes 1 an Ni layer for forming an ohmic contact with a p-GaN layer, 2 an Mo layer having a |
| 6803603 |
Semiconductor light-emitting element |
October 12, 2004 |
| Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently |
| 6586874 |
Image display device and light emission device |
July 1, 2003 |
| An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversi |
| 6495862 |
Nitride semiconductor LED with embossed lead-out surface |
December 17, 2002 |
| Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type G |
| 6417020 |
Nitride compound light emitting device and method for fabricating the same |
July 9, 2002 |
| An electrode of a metal, which is one of Group IV and VI elements, is deposited on an n-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer. Alternatively, after an electrode material of carbon, germanium), selenium, rhodium, tellurium, iridium, zirconium, hafnium, copper, titanium nitride, |
| 6316792 |
Compound semiconductor light emitter and a method for manufacturing the same |
November 13, 2001 |
| A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to th |
| 6281526 |
Nitride compound light emitting device and method for fabricating same |
August 28, 2001 |
| An electrode of a metal, which is one of Group IV and VI elements, is deposited on an n-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer. Alternatively, after an electrode material of carbon, germanium), selenium, rhodium, tellurium, iridium, zirconium, hafnium, copper, titanium nitride, |
| 6228981 |
Process for preparing an aqueous dispersion coating material and process for preparing a powder |
May 8, 2001 |
| A process for preparing an aqueous dispersion coating material containing a resin component having a softening temperature of from 10 to 250.degree. C., which comprises:(1) a step of mixing various starting materials which will be coating film-constituting components, to obtain a blend m |
| 5990500 |
Nitride compound semiconductor light emitting element and its manufacturing method |
November 23, 1999 |
| A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), and another metal layer ma |
| 5977566 |
Compound semiconductor light emitter |
November 2, 1999 |
| A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to th |
| 5966396 |
Gallium nitride-based compound semiconductor laser and method of manufacturing the same |
October 12, 1999 |
| A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure |
| 5157473 |
Avalanche photodiode having guard ring |
October 20, 1992 |
| For providing an avalanche photodiode having a good guard ring effect and a high speed response, a body of semiconductor materials is prepared, which includes a window layer of n-type InP epitaxially grown on an avalanche multiplication layer of n.sup.+ -type InP. The window layer is sel |
| 4268542 |
Process for forming multi-layer coatings |
May 19, 1981 |
| The present invention relates to a process for forming a multi-layer coating including at least two coating layers by performing the oven drying step at one time, which comprises coating at least partially the surface of the substrate with a powder coating composition, then applying |
| 4243565 |
Aqueous dispersion type coating composition |
January 6, 1981 |
| This invention relates to an aqueous dispersion type coating composition comprising a homogeneous mixture of an aqueous medium, synthetic resin particles and a scaly aluminum pigment. |
| 4137349 |
Process for forming multi-layer coatings |
January 30, 1979 |
| The present invention relates to a process for forming a multi-layer coating including at least two coating layers by performing the oven drying step at one time, which comprises applying a slurry paint comprising synthetic resin particles dispersed in an aqueous medium, to an undrie |
