| Patent Number |
Title Of Patent |
Date Issued |
| 7154238 |
Semiconductor integrated circuit including a motor driving control apparatus having an amplitude |
December 26, 2006 |
| An amplitude regulation circuit which includes a maximum detection circuit which outputs a maximum signal MAX that is distorted to some extent during and around a time when a highest-level signal switches between signals V1, V2, and V3. The amplitude regulation circuit also includes a |
| 7002308 |
Motor driving control method and apparatus with amplitude regulation circuit |
February 21, 2006 |
| An amplitude regulation circuit which includes a maximum detection circuit which outputs a maximum signal MAX that is distorted to some extent during and around a time when a highest-level signal switches between signals V1, V2, and V3. The amplitude regulation circuit also includes a |
| 6559895 |
Analog memory and image processing system for reducing fixed pattern noise |
May 6, 2003 |
| Fixed pattern noise of an analog memory is reduced. Transfer paths of an address selection signal (SL) between an address generation unit (10) and respective storage elements (21) for storing an analog signal are constructed to have a substantially uniform electric characteristic in |
| 6552402 |
Composite MOS transistor device |
April 22, 2003 |
| A composite MOS transistor device for a semiconductor integrated circuit includes at least a pair of MOS transistors, or first and second MOS transistors, placed on the same board. The first and second MOS transistors are made up of first and second groups of equally divided transist |
| 6121826 |
Comb filter and method for controlling the same |
September 19, 2000 |
| A comb filter easily implementable as a monolithic LSI without using a large-capacitance capacitor is provided. A comb-like frequency characteristic is realized by two delay circuits for delaying a signal for mutually different amounts of time and an operation circuit for deriving a |
| 5892702 |
Semiconductor memory device and method of manufacturing the same |
April 6, 1999 |
| In a semiconductor memory device having cylindrical capacitors, word lines and a bit line are formed on a semiconductor substrate. A cylindrical storage node is connected to a conductive layer. The cylindrical storage node is provided at its inner wall with protruded conductive conductor |
| 5506164 |
Method of manufacturing a semiconductor device having a cylindrical capacitor |
April 9, 1996 |
| The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 1 |
| 5408114 |
Semiconductor memory device having cylindrical capacitor and manufacturing method thereof |
April 18, 1995 |
| The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 1 |
| 4997360 |
Apparatus for manufacturing heat-shrinkable resin tube |
March 5, 1991 |
| An apparatus for manufacturing a heat-shrinkable tube has a die formed with a center bore through which a resin tube passes and a plurality of radial holes extending from the bore to the outer periphery of the die. The die is contained in a tank filled with a cooling fluid so that the di |
| 4985319 |
Process for manufacturing a photomask |
January 15, 1991 |
| A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of |
| 4977105 |
Method for manufacturing interconnection structure in semiconductor device |
December 11, 1990 |
| Conductive layers (5a, 8a) included in a multi-layer structure (30a) are electrically interconnected through an conductive connection wall (13a) provided in a contact hole (12) and contacting the side surface (22) of the multi-layer structure (30a). The upper conductive layer (11a) exist |
| 4959329 |
Semiconductor device |
September 25, 1990 |
| The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor laye |
| 4916508 |
CMOS type integrated circuit and a method of producing same |
April 10, 1990 |
| A MOS type integrated circuit transistor includes: a channel region comprising a monocrystalline epitaxial layer; and a source/drain region of said transistor and a wiring region of a diffusion layer formed of a polycrystalline silicon layer grown on an embedded insulating film. |
| 4910578 |
Semiconductor device having a metal electrode interconnection film with two layers of silicide |
March 20, 1990 |
| A semiconductor device comprises a silicon substrate (1) formed with impurity diffusion layers (5, 9) in a region defined by insulating films (2a, 2b) for separating elements and an aluminum alloy film (11) for electrode interconnection having a contact hole portion 7 whose bottom is |
| 4903117 |
Semiconductor device |
February 20, 1990 |
| A silicon oxide film and a BPSG film are formed on a silicon substrate to serve as insulating films, and a contact hole is selectively formed in the insulating films. An impurity diffusion layer is formed on the surface layer of the semiconductor substrate at the bottom portion of the co |
| 4887143 |
Semiconductor device |
December 12, 1989 |
| The present invention relates to a semiconductor device having a contact electrode structure and a method of manufacturing the same. An insulating layer is provided in a second semiconductor layer or in a junction part between the second semiconductor layer and a first semiconductor laye |
| 4876164 |
Process for manufacturing a photomask |
October 24, 1989 |
| A photomask manufacturing process including a step of forming metal silicide film on a transparent silica glass substrate. A resist is applied onto the metal silicide film and then a patterning mask is provided by light or electron beam, followed by developing step. Exposed portions of |
| 4873163 |
Photomask material |
October 10, 1989 |
| A photomask material according to the present invention comprises a transparent substrate and a silicide film of a transition metal formed on the transparent substrate. |
| 4872050 |
Interconnection structure in semiconductor device and manufacturing method of the same |
October 3, 1989 |
| Conductive layers (5a, 9a) included in a multi-layer structure (30a) are electrically interconnected through a conductive connection wall (13a) provided in a contact hole (12) and contacting the side surface (22) of the multi-layer structure (30a). The upper conductive layer (11a) existi |
| 4710790 |
MOS transistor |
December 1, 1987 |
| A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween. |
| 4708904 |
Semiconductor device and a method of manufacturing the same |
November 24, 1987 |
| A semiconductor device and a method of manufacturing the same which comprises a semiconductor substrate and a conductive region formed thereon in multilayer structure of a film of refractory metal or refractory metal silicide inferior in corrosion resistance against a solution containing |
| 4707723 |
Semiconductor device using a refractory metal as an electrode and interconnection |
November 17, 1987 |
| A semiconductor device in which a multilayer film comprising a low resistance refractory metal silicide film and a low resistance ternary alloy film formed thereon and having corrosion resistance to hydrofluoric acid is used as an electrode and interconnection. The above stated low r |
| 4665608 |
Method of manufacturing semiconductor devices |
May 19, 1987 |
| A method of manufacturing a semiconductor device comprises a step of preparing a semiconductor substrate (12) having a surface layer of silicon, a step of forming a conductive thin film (14) of a silicide composed of a metal having a high melting point and silicon on the semiconducto |
| 4043037 |
Cord-type mowing tool |
August 23, 1977 |
| A cord-type mowing tool having a cutter body formed with at least one radially extending bore for receiving a cord serving as a grass cutting blade, and a clamping member fitted in the central bottom opening of the cutter body for forcing against the central portion of the cutter body an |
