| Patent Number |
Title Of Patent |
Date Issued |
| 7038233 |
Semiconductor optical devices and optical modules |
May 2, 2006 |
| An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor opti |
| 6639925 |
Optical information processing equipment and semiconductor light emitting device suitable theref |
October 28, 2003 |
| An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor o |
| 6635908 |
Burying type avalanche photodiode and fabrication method thereof |
October 21, 2003 |
| The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving the object has an absorption lay |
| 6542526 |
Optical information processor and semiconductor light emitting device suitable for the same |
April 1, 2003 |
| Provided are highly reliable information processing equipment enabling a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, which device is suitable for the information pr |
| 5543629 |
Superlattice avalanche photodiode (APD) |
August 6, 1996 |
| A superlattice APD includes light absorption layer for generating carriers by absorbing light, a multiplication layer for multiplying the carriers, and a pair of electrodes for driving the carriers. The multiplication layer includes a superlattice structure with a well layer less than 10 |
| 5324959 |
Semiconductor optical device having a heterointerface therein |
June 28, 1994 |
| A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-inte |
| 5299217 |
Semiconductor light-emitting device with cadmium zinc selenide layer |
March 29, 1994 |
| A semiconductor light-emitting device containing as first and second semiconductor layers a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0<x.ltoreq.1, 0.ltoreq.y.ltoreq.1) and as an active layer a semiconductor of Cd.sub.x Zn.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltor |
| 5177758 |
Semiconductor laser device with plural active layers and changing optical properties |
January 5, 1993 |
| A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates the |
| 5170404 |
Semiconductor laser device suitable for optical communications systems drive |
December 8, 1992 |
| Disclosed in a semiconductor laser device for use in a system or apparatus utilizing light for information transmission in optical communication or the like, in which lattice defects or the like are prevented from occurring in the vicinity of a light-emitting active area to thereby r |
| 5136601 |
Semiconductor laser |
August 4, 1992 |
| A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to |
| 5132981 |
Semiconductor optical device |
July 21, 1992 |
| A semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light are interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc., includes a quantum well structure having a |
| 5119393 |
Semiconductor laser device capable of controlling wavelength shift |
June 2, 1992 |
| A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates the |
| 5073892 |
Semiconductor laser device |
December 17, 1991 |
| A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby |
| 5042049 |
Semiconductor optical device |
August 20, 1991 |
| A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by usi |
| 4881235 |
Semiconductor laser having a multiple quantum well structure doped with impurities |
November 14, 1989 |
| In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher |
| 4835578 |
Semiconductor device having a quantum wire and a method of producing the same |
May 30, 1989 |
| A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a |
| 4602371 |
High output semiconductor laser device utilizing a mesa-stripe optical confinement region |
July 22, 1986 |
| A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconducto |
| 4563764 |
Semiconductor laser device |
January 7, 1986 |
| Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index |
