| Patent Number |
Title Of Patent |
Date Issued |
| 5789284 |
Method for fabricating semiconductor thin film |
August 4, 1998 |
| An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorpho |
| 5705829 |
Semiconductor device formed using a catalyst element capable of promoting crystallization |
January 6, 1998 |
| A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, f |
| 5656825 |
Thin film transistor having crystalline semiconductor layer obtained by irradiation |
August 12, 1997 |
| An amorphous semiconductor film having a thickness of 400.ANG. or more is formed on an insulating surface and is wholly or selectively etched to form a region having a thickness 300.ANG. or less. This is used as a channel-forming region in a TFT. |
| 5654203 |
Method for manufacturing a thin film transistor using catalyst elements to promote crystallizati |
August 5, 1997 |
| In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous |
| 5643826 |
Method for manufacturing a semiconductor device |
July 1, 1997 |
| A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous |
| 5612250 |
Method for manufacturing a semiconductor device using a catalyst |
March 18, 1997 |
| A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous |
| 5585291 |
Method for manufacturing a semiconductor device containing a crystallization promoting material |
December 17, 1996 |
| A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, |
| 5543352 |
Method for manufacturing a semiconductor device using a catalyst |
August 6, 1996 |
| A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous |
| 5436516 |
Inertial device for energy storage |
July 25, 1995 |
| An energy storage device which comprises at least a first object having a rotational mechanism which rotates around an axis and a surface which generates a magnetic field; at least a second object comprising a superconductor and having provided separately from said first object but f |
| 5326746 |
Fabrication method of superconductive thin film transistor |
July 5, 1994 |
| A planar type superconductive thin film transistor using oxide superconductive materials and utilizing a long distance proximity effect is obtained with a good reproducibility.In order to obtain the planar type superconductive transistor utilizing the long distance proximity effect, an i |
| 5322818 |
Method for forming an oxide superconducting material |
June 21, 1994 |
| A method for forming an oxide superconducting material by preparing first a shaped magnetic shield comprising an oxide superconductor as a matrix, and then effecting CVD and further EVD to fill in the pores of the matrix with an oxide superconductor; more specifically, it comprises intro |
| 5225396 |
Method for forming an oxide superconducting film |
July 6, 1993 |
| A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide supe |
