| Patent Number |
Title Of Patent |
Date Issued |
| RE38266 |
Method for fabricating semiconductor thin film |
October 7, 2003 |
| An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorpho |
| 7429751 |
Method of manufacturing a semiconductor device |
September 30, 2008 |
| There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a |
| 7427780 |
Semiconductor device and method of fabricating same |
September 23, 2008 |
| There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal pro |
| 7425743 |
Projection television set |
September 16, 2008 |
| Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device charact |
| 7420211 |
Wiring line and manufacture process thereof, and semiconductor device and manufacturing process |
September 2, 2008 |
| To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a r |
| 7417253 |
Semiconductor device and manufacturing method therefor |
August 26, 2008 |
| An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from |
| 7414288 |
Semiconductor device having display device |
August 19, 2008 |
| A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at hig |
| 7410850 |
Heating treatment device, heating treatment method and fabrication method of semiconductor devic |
August 12, 2008 |
| To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film o be treated is formed and infrared light is irradiated from the |
| 7402471 |
Semiconductor device and method for manufacturing the same |
July 22, 2008 |
| A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, f |
| 7397518 |
Active matrix liquid crystal with capacitor below disclination region |
July 8, 2008 |
| An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulati |
| 7391054 |
Semiconductor device and manufacturing method thereof |
June 24, 2008 |
| The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from t |
| 7391051 |
Semiconductor device forming method |
June 24, 2008 |
| In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain |
| 7378126 |
Light-emitting device and method of manufacturing the same, and method of operating manufacturin |
May 27, 2008 |
| The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed below the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitiv |
| 7374978 |
Method of manufacturing semiconductor device |
May 20, 2008 |
| A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the |
| 7358163 |
Semiconductor device and method for fabricating the same |
April 15, 2008 |
| A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided |
| 7339235 |
Semiconductor device having SOI structure and manufacturing method thereof |
March 4, 2008 |
| A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 |
| 7338913 |
Semiconductor device, manufacturing method thereof, and electronic device |
March 4, 2008 |
| A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irr |
| 7326604 |
Semiconductor device and method of manufacturing the same |
February 5, 2008 |
| In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain |
| 7323717 |
Semiconductor device |
January 29, 2008 |
| A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary, wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Sin |
| 7307007 |
Semiconductor device |
December 11, 2007 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 7300826 |
Manufacturing method of semiconductor and manufacturing method of semiconductor device |
November 27, 2007 |
| The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared lamps while scanned with the |
| 7297978 |
Semiconductor thin film and semiconductor device |
November 20, 2007 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 7294535 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
November 13, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin film. After the cryst |
| 7291967 |
Light emitting element including a barrier layer and a manufacturing method thereof |
November 6, 2007 |
| According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole |
| 7282398 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and me |
October 16, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7279372 |
Manufacturing method of semiconductor device |
October 9, 2007 |
| Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensabl |
| 7271082 |
Method of manufacturing a semiconductor device |
September 18, 2007 |
| A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate pr |
| 7256760 |
Semiconductor device |
August 14, 2007 |
| A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and |
| 7253441 |
Method of manufacturing thin film transistor |
August 7, 2007 |
| The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment mann |
| 7244962 |
Method of manufacturing semiconductor devices |
July 17, 2007 |
| Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate |
| 7235828 |
Semiconductor device with residual nickel from crystallization of semiconductor film |
June 26, 2007 |
| It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon |
| 7235810 |
Semiconductor device and method of fabricating the same |
June 26, 2007 |
| There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a fi |
| 7226823 |
Semiconductor device and method of manufacturing the same |
June 5, 2007 |
| In a method of obtaining a crystalline silicon film having high crystallinity at a low temperature and for a short time by using a catalytic element and using both a heat treatment and irradiation of laser light, a catalytic element which does not require a gettering step is used as |
| 7223666 |
Semiconductor device that includes a silicide region that is not in contact with the lightly dop |
May 29, 2007 |
| There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a |
| 7214574 |
Heating treatment device, heating treatment method and fabrication method of semiconductor devic |
May 8, 2007 |
| To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is irradiated from the |
| 7202497 |
Semiconductor device |
April 10, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7198991 |
Method of manufacturing an active matrix display device |
April 3, 2007 |
| A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Sinc |
| 7195801 |
Manufacturing process for storing and transferring evaporation material |
March 27, 2007 |
| A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a container (first container |
| 7192865 |
Semiconductor device and process for producing the same |
March 20, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7192813 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
March 20, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7186601 |
Method of fabricating a semiconductor device utilizing a catalyst material solution |
March 6, 2007 |
| A very thin oxide film is formed on an amorphous silicon film that is formed on a glass substrate, and an aqueous solution such as an acetate solution added with a catalyst element such as nickel by 10 to 200 ppm (adjustment needed) is dropped thereon. After the structure is held in |
| 7186600 |
Semiconductor device and method of manufacturing the same |
March 6, 2007 |
| There is provided a method in which a TFT with superior electrical characteristics is manufactured and a high performance semiconductor device is realized by assembling a circuit with the TFT. The method of manufacturing the semiconductor device includes: a step of forming a crystal- |
| 7186597 |
Method of manufacturing transistors |
March 6, 2007 |
| A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the |
| 7179698 |
Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
February 20, 2007 |
| To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser lig |
| 7173282 |
Semiconductor device having a crystalline semiconductor film |
February 6, 2007 |
| Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a |
| 7173280 |
Electro-optical device and manufacturing method thereof |
February 6, 2007 |
| A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate elec |
| 7166500 |
Method of manufacturing a semiconductor device |
January 23, 2007 |
| In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insu |
| 7153729 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
December 26, 2006 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, an |
| 7148094 |
Semiconductor device and method for its preparation |
December 12, 2006 |
| A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method f |
| 7141821 |
Semiconductor device having an impurity gradient in the impurity regions and method of manufactu |
November 28, 2006 |
| The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from t |
