| Patent Number |
Title Of Patent |
Date Issued |
| 6949387 |
Method of designing a semiconductor device |
September 27, 2005 |
| A technique for a semiconductor device is provided that includes forming circuit regions on a device formation region and device isolation regions on a semiconductor substrate, a ratio of the width of a device isolation region to the width of adjacent circuit regions thereto is set at 2 |
| 6894334 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
May 17, 2005 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 6620704 |
Method of fabricating low stress semiconductor devices with thermal oxide isolation |
September 16, 2003 |
| A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a des |
| 6573546 |
Semiconductor integrated circuit device and process for manufacturing the same |
June 3, 2003 |
| A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the |
| 6548847 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING |
April 15, 2003 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 6342412 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
January 29, 2002 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 6310384 |
Low stress semiconductor devices with thermal oxide isolation |
October 30, 2001 |
| A width of a circuit device isolation region and a width of a device region formed on a semiconductor substrate are determined in such a manner as to satisfy a condition which prevents the occurrence of dislocation due to thermal oxidation for forming the isolation region. In accordance |
| 6291847 |
Semiconductor integrated circuit device and process for manufacturing the same |
September 18, 2001 |
| A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the |
| 6169324 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
January 2, 2001 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 6127255 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
October 3, 2000 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The |
| 5889312 |
Semiconductor device having circuit element in stress gradient region by film for isolation and |
March 30, 1999 |
| A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for contro |
| 5874877 |
Circuit breaker |
February 23, 1999 |
| A circuit breaker with a completely electromagnetic type overcurrent tripping device has a flexibility for changes in the production schedule of the overcurrent tripping device. An overcurrent tripping device for each pole is integrally housed in a common unit case, which is then ins |
| 5811316 |
Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring |
September 22, 1998 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5794763 |
Circuit breaker |
August 18, 1998 |
| A circuit breaker of the invention is formed of a container and a switch mechanism unit accommodated in the container. The switch mechanism unit is formed of a handle lever having a rotating shaft, a handle and lever arms; a movable contact having a movable contact point at one end with |
| 5780882 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
July 14, 1998 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5739589 |
Semiconductor integrated circuit device process for fabricating the same and apparatus for fabri |
April 14, 1998 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5557147 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
September 17, 1996 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5512194 |
Acicular ferromagnetic iron oxide particles and process for producing the same |
April 30, 1996 |
| There are provided acicular berthollide particles comprising crystalline particles expressed by the formula FeOx (1.33.ltoreq.x<1.5) and modified with a specific amount of zinc ions and a process producing the same which comprises the steps of oxidizing acicular magnetic iron oxide pa |
| 5331191 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
July 19, 1994 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5202275 |
Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fab |
April 13, 1993 |
| Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, |
| 5041307 |
Process for producing magnetic iron oxide particles for magnetic recording |
August 20, 1991 |
| A process for producing magnetic ion oxide particles for magnetic rcording which comprises heat-treating a magnetic iron oxide particles of magnetite, berthollide or maghemite as a starting materials, in the presence of a zinc component or both a zinc component and a silicon componen |
| 4974060 |
Semiconductor integrated circuit device and method of manufacturing the same |
November 27, 1990 |
| A dynamic RAM having memory cells each being constructed of a MISFET and a capacitor element which are formed in the shape of a pillar on the domain of a semiconductor substrate where a bit line and a word line intersect. The transfer MISFET is formed at the lower part of the pillar-shap |
| 4585695 |
Electrically conductive polypyrrole article |
April 29, 1986 |
| An oriented electrically conductive polypyrrole article having a degree of orientation of at least 40% in at least one direction; an electrically conductive polypyrrole article having an electrical conductivity of at least 100 S/cm.; a process for producing an electrically conductive |
| 4501774 |
Process for the production of cobalt-containing magnetic iron oxide powder |
February 26, 1985 |
| A process is provided for coating the particle surfaces of a phosphor-containing magnetic iron oxide powder with a cobalt compound after subjecting said powder to an activation treatment with an aqueous alkaline and/or acidic medium. The cobalt-containing magnetic iron oxide powder o |
| 4369207 |
Process for production of laminated film structure of aromatic polyester |
January 18, 1983 |
| A laminated film structure composed of a polyester film and an electroconductive metal layer laminated to at least one surface of the polyester resin film, characterized in that said polyester film is an unstretched film of a cured aromatic polyester having a crosslinking degree of n |
| 4333907 |
Biaxially oriented wholly aromatic polyester film |
June 8, 1982 |
| A melt-molded film of a wholly aromatic polyester, said film having in its plane two perpendicularly crossing directions in each of which the Young's modulus and strength of the film at 25.degree. C. are at least about 200 kg/mm.sup.2 and at least about 5 kg/mm.sup.2 respectively, the pr |
| 4331800 |
Process for producing aromatic polyesters having an increased degree of polymerization |
May 25, 1982 |
| A process for producing an aromatic polyester having an increased degree of polymerization, which comprises reacting a substantially linear, fiber forming aromatic polyester containing terminal hydroxyl groups and having an aromatic dicarboxylic acid as a main acid component at an elevat |
| 4331697 |
Novel heparin derivative, method for production thereof, and method for rendering biomedical mat |
May 25, 1982 |
| A heparin derivative in which at least 0.5% of the entire hydroxyl groups of heparin are in the form of an ester of the following formula ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 each represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; a method for producing |
| 4292151 |
Process for preparing a cured copolyetherester elastomeric composition |
September 29, 1981 |
| A process for preparing a cured copolyetherester elastomeric composition comprising following steps I and II:Step I: melt-extruding an uncured linear copolyetherester elastomeric composition of [A] and [B] to follow:[A] a linear copolyetherester elastomer composed of(A-1) a hard segment cons |
| 4291152 |
Process for producing aromatic polyesters having increased degrees of polymerization |
September 22, 1981 |
| A process for producing an aromatic polyester having an increased degree of polymerization. The process comprises reacting a hydroxyl-terminated, substantially linear, fiber-forming aromatic polyester having an aromatic dicarboxylic acid as a main acid component at an elevated temperatur |
| 4269947 |
Cured or uncured aromatic polyester composition and process for its production |
May 26, 1981 |
| A cured or uncured linear aromatic polyester composition melt-blended and composed of(A) 100 parts by weight of a saturated linear aromatic polyester in which at least 70 mole % of the acid component consists of an aromatic dicarboxylic acid, and(B) 0.1 to 50 parts by weight of a reactiv |
| 4196066 |
Cured aromatic polyester composition and process for its production |
April 1, 1980 |
| A cured or uncured linear aromatic polyester composition melt-blended and composed of(A) 100 parts by weight of a saturated linear aromatic polyester in which at least 70 mole % of the acid component consists of an aromatic dicarboxylic acid, and(B) 0.1 to 50 parts by weight of a reactiv |
