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Eiichi Nishimura Patents
Inventor:
Nishimura; Eiichi
Address:
Nirasaki, JP
No. of patents:
18
Patents:




Patent Number Title Of Patent Date Issued
7402523 Etching method July 22, 2008
A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma w
7344993 Low-pressure removal of photoresist and etch residue March 18, 2008
A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrat
7169440 Method for removing photoresist and etch residues January 30, 2007
A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the
6925177 Echo canceler compensating for amplifier saturation and echo amplification August 2, 2005
An echo canceler having a predictive filter that generates an echo replica signal and an adder that subtracts the echo replica signal from a send input signal also has a receive input amplifier and a clipping circuit. The clipping circuit clips the input to the predictive filter at a
6849559 Method for removing photoresist and etch residues February 1, 2005
A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to th
5766498 Anisotropic etching method and apparatus June 16, 1998
A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower
5741552 Coating composition and method for forming multi-layer coating April 21, 1998
A multi-layer coating comprising a base coat and a topcoat is formed on an article such as a chemically-treated steel plate by coating the article with a base coat composition containing (a) a cross-linking agent which does not interfere with the hydrosilylation reaction of a topcoat
5465223 Barrel shifter November 7, 1995
A left shift tri-state buffer and a right shift tri-state buffer are provided in each of a plurality of barrel-shifter unit circuits which constitute a barrel-shifter, wherein a left or right shift control signal supplied to a left and right shift input terminal enables either of them.
5445709 Anisotropic etching method and apparatus August 29, 1995
A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower
5314603 Plasma processing apparatus capable of detecting and regulating actual RF power at electrode wit May 24, 1994
A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actua
5147493 Plasma generating apparatus September 15, 1992
A plasma generating apparatus comprising a transformer including a primary winding connected to a high frequency power source and a secondary winding having two end terminals and a plurality of tap terminals connected between the end terminals, the transformer being adapted to deliver fi
5060301 Optical repeated transmission method and system October 22, 1991
In a system of optical repeated transmission having a signal transmission path for transmitting signal light, and an optical repeater disposed in the signal transmission path, and directly amplifying the signal light, the amplification factor of the repeater is not dependent on the direc
5010510 Multiplying unit circuit April 23, 1991
A parallel multiplier consists of a systolic array of AND gates and full adders organized in stages so that each stage generates a partial product, adds it to the preceding partial products, and furnishes the sum to the next stage. A control circuit is provided that disables the outputs
4995696 Optical amplifier module February 26, 1991
A fiber input/output type semiconductor optical amplifier module is disclosed. The optical amplifier module of the present invention, a semiconductor laser amplifier chip is provided for direct amplification of signal light beam. An optical coupling between the semiconductor laser ch
4982355 Low-power parallel multiplier January 1, 1991
A parallel multiplier consists of a systolic array of AND gates and full adders organized in stages so that each stage generates a partial product, adds it to the preceding partial products, and furnishes the sum to the next stage. A control circuit is provided that disables the outputs
4803356 Method and apparatus for measuring degree of vacuum in an electron microscope February 7, 1989
The present invention comprises disposing an electrode group consisting of an anode and cathodes provided on both sides of the anode at a portion where the degree of vacuum in an electron microscope is to be measured closing in thermal electrons between the electrode group and a magnetic
4740694 Method and apparatus for analyzing positron extinction and electron microscope having said appar April 26, 1988
This invention relates to a method and apparatus for positron extinction analysis which irradiates a positron beam to a sample to be analyzed through a convergent lens system consisting of a magnetic lens and measures the extinction .gamma.-rays generated from the sample for the posi
4451428 Control rods and method of producing same May 29, 1984
A control rod for a boiling-water reactor having blades arranged in the form of a cross in transverse cross section includes a plurality of poison tubes disposed therein. Boron carbide powder which is a neutron absorbing material causing an (n, .alpha.) reaction to take place is charged


 
 
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