| Patent Number |
Title Of Patent |
Date Issued |
| 7295663 |
Network communication system |
November 13, 2007 |
| The present invention is directed to a network communication system that provides textual communication and call transferring between nodes. The system further allows simultaneous notification of multiple nodes of an incoming call. The system includes a local computer that may also serve |
| 6934376 |
Network communication system |
August 23, 2005 |
| The present invention is directed to a network communication system that provides textual communication and call transferring between nodes. The system further allows simultaneous notification of multiple nodes of an incoming call. The system includes a local computer that may also serve |
| 6501779 |
Network communication system |
December 31, 2002 |
| A communication system allows a remote user to access a web site across a PSTN using a conventional text device such as a TTY device. The web site is configured with text, menu options, and communication transfer capabilities as may be found in an automated telephone service. The system |
| 6181736 |
Network communication system |
January 30, 2001 |
| A network communications system containing one or more nodes includes an ITU/TDD/VOICE modem in electrical communication with a local computer. A remote device connecting to the ITU/TDD/VOICE modem is able to converse in real time using textual characters with the local computer user. On |
| 5969698 |
Manually controllable cursor and control panel in a virtual image |
October 19, 1999 |
| Portable communication equipment having a virtual display including display electronics and optics for providing a virtual image in the display, a virtual control panel image viewable in the virtual display as a portion of the virtual image and cursor electronics connected to the display |
| 5905476 |
ITU/TDD modem |
May 18, 1999 |
| A modem system includes an ITU/TDD/VOICE modem or other modem that is connected to a local computer and a telephone line. The ITU/TDD/VOICE modem allows transmission and reception of ITU, TDD, and voice signals over the telephone line to and from a remote device (such as a remote TDD, |
| 5748161 |
Integrated electro-optical package with independent menu bar |
May 5, 1998 |
| An integrated electro-optical package (50) including a first light emitting device (LED) display chip (28) and at least one additional LED display chip (30), each composed of an optically transparent substrate (10) with an array (15) of LEDs (12) formed thereon and cooperating to generat |
| 5689279 |
Integrated electro-optical package |
November 18, 1997 |
| An integrated electro-optical package including a semiconductor chip with a large array of light emitting devices formed thereon and cooperating to generate a complete real image. The light emitting devices are positioned in rows and columns and connected to pads adjacent outer edges of |
| 5687222 |
ITU/TDD modem |
November 11, 1997 |
| A communication system includes an ITU/TDD/VOICE modem that is connected to a local computer and a telephone line. The ITU/TDD/VOICE modem allows transmission and reception of ITU, TDD, and voice signals over the telephone line to and from a remote device. Examples of remote devices |
| 5612549 |
Integrated electro-optical package |
March 18, 1997 |
| An integrated electro-optical package including an optically transparent substrate with a large array of light emitting devices formed thereon and cooperating to generate a complete real image. The light emitting devices are positioned in rows and columns and connected to pads adjacent o |
| 5432358 |
Integrated electro-optical package |
July 11, 1995 |
| An integrated electro-optical package including a semiconductor chip with a large array of light emitting devices formed thereon and cooperating to generate a complete real image. The light emitting devices are positioned in rows and columns and connected to pads adjacent outer edges of |
| 5224198 |
Waveguide virtual image display |
June 29, 1993 |
| A waveguide virtual image display including image generation apparatus providing a real image at an inlet of an optical waveguide. The real image being reflected a plurality of times within the optical waveguide by diffractive optical elements that magnify and filter the real image and |
| 4661961 |
Buried heterostructure devices with unique contact-facilitating layers |
April 28, 1987 |
| In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma d |
| 4601888 |
Protection of semiconductor substrates during epitaxial growth processes |
July 22, 1986 |
| Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-I |
| 4566171 |
Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
January 28, 1986 |
| In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma d |
| 4482423 |
Protection of semiconductor substrates during epitaxial growth processes |
November 13, 1984 |
| Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-I |
| 4276098 |
Batch processing of semiconductor devices |
June 30, 1981 |
| Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal contact on the top surface is |
| 4273594 |
Gallium arsenide devices having reduced surface recombination velocity |
June 16, 1981 |
| Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface. |
