| Patent Number |
Title Of Patent |
Date Issued |
| 7388893 |
Vertical-cavity surface-emitting laser device array and method of manufacturing the same |
June 17, 2008 |
| A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure |
| 7332744 |
Semiconductor light-emitting device and method of manufacturing the same |
February 19, 2008 |
| A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidi |
| 7196357 |
Optical semiconductor apparatus |
March 27, 2007 |
| The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an acti |
| 7099364 |
Vertical-cavity surface-emitting laser device array and method of manufacturing the same |
August 29, 2006 |
| A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure |
| 7026183 |
Long-wavelength semiconductor light emitting device and its manufacturing method |
April 11, 2006 |
| For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growt |
| 7006544 |
Plane emission type semiconductor laser device and method of manufacturing the same |
February 28, 2006 |
| A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circul |
| 7001851 |
Steam oxidation method |
February 21, 2006 |
| This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a |
| 6960791 |
Optical semiconductor apparatus |
November 1, 2005 |
| The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an acti |
| 6960262 |
Thin film-forming apparatus |
November 1, 2005 |
| A thin film formation apparatus by which source gas is supplied uniformly to the surface of a substrate so that an organic thin film of a uniform film thickness can be formed on the surface of the substrate. The thin film formation apparatus includes a vacuum chamber (11), a substrate |
| 6826216 |
Semiconductor laser and method of production thereof |
November 30, 2004 |
| A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is provided on a substrate having a surface tilted to a [0-1-1] direction from a (100) plane, a |
| 6633054 |
Method of fabricating a semiconductor light-emitting device and the semiconductor light-emitting |
October 14, 2003 |
| A method of fabricating a semiconductor light-emitting device in which the window structure can readily be obtained without relying upon an advanced process technology. In the method of the present invention, a first multi-layered film formed on a substrate is patterned into a groove |
| 6630366 |
Manufacturing method for light emitting device |
October 7, 2003 |
| In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semiconductor substrate, and at least |
| 6567445 |
Method to manufacture a heat emission apparatus in a semiconductor laser |
May 20, 2003 |
| A semiconductor emission element is disclosed including a plurality of the laser oscillator formed on the opposite side of a base of a substrate. P-side electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by increasing its thickness, a |
| 6548317 |
Photoelectric conversion element and method for manufacturing the same |
April 15, 2003 |
| The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately.The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same |
| 6468820 |
Process for fabricating semiconductor laser emitting apparatus |
October 22, 2002 |
| In the fabrication of a semiconductor laser emitting apparatus which emits laser beams having two different wavelengths, surface steps of the laminate film which is formed so as to cover the first semiconductor laser emitting device and constitutes the second semiconductor laser emitting |
| 6459714 |
Heat emission apparatus in a semiconductor laser |
October 1, 2002 |
| It is an object to provide a semiconductor emission element which can promote radiation while being manufactured easily, and a method of manufacturing the same. In the semiconductor emission element of the invention, a plurality of the laser oscillator are formed on the opposite side |
| 6444998 |
Semiconductor light emitting device and manufacturing method thereof |
September 3, 2002 |
| In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semiconductor substrate, and at least |
| 6404790 |
Semiconductor laser and multi-semiconductor laser |
June 11, 2002 |
| A stripe portion extending in an <011> crystal axis direction of a compound semiconductor substrate (1) in which a {100} crystalline surface is made a major surface is formed between stepped portions (41), a laser resonator is formed in the stripe portion, the width of the stripe p |
| 6310381 |
Photoelectric conversion element and method for manufacturing the same |
October 30, 2001 |
| The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately.The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same |
| 5920587 |
Optical device and method of manufacturing the same |
July 6, 1999 |
| A semiconductor laser device having light output monitoring light-receiving portion can be fabricated monolithically. A semiconductor laser element (LD) composed of a first cladding layer (22), an active layer (23) and a second cladding layer (24) is formed on a semiconductor substrate ( |
| 5883913 |
Optical device |
March 16, 1999 |
| An optical device has an optical element 21 comprising a light-emitting region 1 and a light-detecting region 4 disposed closely to each other on a common substrate 9. Returning light L.sub.R from an irradiated medium which is irradiated with light L emitted by the light-emitting region |
| 5757029 |
Triangular pyramidal semiconductor structure and optical device using the same |
May 26, 1998 |
| A triangular pyramidal semiconductor structure which precisely splits light is provided by preventing an unnecessary crystal plane from growing on the boundary of side surface crystal planes of the triangular pyramidal semiconductor structure. The triangular pyramidal semiconductor struc |
| 5708645 |
Semiconductor laser device to detect a divided reflected light beam |
January 13, 1998 |
| An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element in which a light-emitting portion and a light receiving portion are closely disposed on a c |
| 5703863 |
Optical device which detects reflected light with a push-pull method without dividing the reflec |
December 30, 1997 |
| An optical device comprises a light-emitting portion (4), a converging means (3), and a light-receiving portion (5), wherein light (L.sub.F) emitted from the light-emitting portion (4) is converged and irradiated by the converging means (3) on an irradiated portion (2) and returned light |
| 5679947 |
Optical device having a light emitter and a photosensor on the same optical axis |
October 21, 1997 |
| An optical device structure can be simplified and miniaturized on the whole. A fabrication of optical device can be simplified and the optical device can be improved in reliability. The optical device can increase its output, operate a light emitting light source with a reduced power and |
| 5608233 |
Optical device for magneto-optical disc system |
March 4, 1997 |
| An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element (101) in which a light-emitting portion (4) and a light-receiving portion (5) are closely d |
| 5568463 |
Semiconductor laser device to detect a divided reflected light beam |
October 22, 1996 |
| An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element in which a light-emitting portion and a light receiving portion are closely disposed on a c |
| 5438583 |
Semiconductor laser with optimum resonator |
August 1, 1995 |
| A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating |
| 5383215 |
Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizo |
January 17, 1995 |
| An SDH semiconductor laser has a semiconductor substrate which is (100) oriented and has a stripe ridge thereon, first and second cladding layers disposed on stripe ridge, an active layer sandwiched between the first and second cladding layers, and an electrode held in electric contact w |
| 5111469 |
Semiconductor laser |
May 5, 1992 |
| A semiconductor laser comprises a semiconductor substrate provided in its major surface with a strip mesa, and a laminated structure constructed by sequentially forming, through the epitaxial deposition of semiconductor materials on the major surface of the semiconductor substrate, at le |
