| Patent Number |
Title Of Patent |
Date Issued |
| 7348195 |
Semiconductor light-emitting device and method for fabricating the device |
March 25, 2008 |
| An n-type AlAs/n-type Al.sub.0.5Ga.sub.0.5As DBR layer and a p-type (Al.sub.0.2Ga.sub.0.8).sub.0.5In.sub.0.5P/p-type Al.sub.0.5In.sub.0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wav |
| 7285436 |
Method of manufacturing a semiconductor light-emitting device |
October 23, 2007 |
| A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productiv |
| 7217955 |
Semiconductor laser device |
May 15, 2007 |
| A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitoring photodiode composed of crystalline silicon |
| 7166865 |
Semiconductor light emitting device and method for manufacturing same |
January 23, 2007 |
| There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based sem |
| 7005682 |
Semiconductor light emitting element |
February 28, 2006 |
| A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a curre |
| 6984850 |
Semiconductor light-emitting diode |
January 10, 2006 |
| A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and a |
| 6936858 |
Semiconductor light-emitting diode |
August 30, 2005 |
| A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and a |
| 6924502 |
Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum |
August 2, 2005 |
| A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active |
| 6881985 |
Light emitting diode |
April 19, 2005 |
| A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-si |
| 6864514 |
Light emitting diode |
March 8, 2005 |
| A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof. |
| 6822266 |
Semiconductor light-emitting device |
November 23, 2004 |
| A semiconductor light-emitting device includes an active layer having a single quantum well structure. The single quantum well structure enables a high-speed response such that the rise and fall time is 2.1 nsec. Further, the single quantum well active layer is doped with Zn at a concent |
| 6815727 |
Semiconductor light emitting device |
November 9, 2004 |
| A resonant cavity type light emitting diode has a first DBR made of n-type AlAs or Al.sub.0.5 Ga.sub.0.5 As, a quantum well active layer, a second DBR made of p-type (Al.sub.0.2 Ga.sub.0.6).sub.0.5 In.sub.0.5 P or Al.sub.0.5 In.sub.0.5 P, and an n-type current constriction layer on an |
| 6797986 |
Semiconductor light emitting element |
September 28, 2004 |
| Is provided a resonant cavity type light emitting diode having excellent humidity durability and a light output unsaturated even several 10 mA., which is suitable for mass production. The semiconductor light emitting element has a resonator formed by one set of multi-layer reflecting fil |
| 6794688 |
Semiconductor light-emitting device and manufacturing method therefor, and LED lamp and LED disp |
September 21, 2004 |
| A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productiv |
| 6794687 |
Semiconductor light-emitting device and method for fabricating the device |
September 21, 2004 |
| An n-type AlAs/n-type Al.sub.0.5 Ga.sub.0.5 As DBR layer and a p-type (Al.sub.0.2 Ga.sub.0.8).sub.0.5 In.sub.0.5 P/p-type Al.sub.0.5 In.sub.0.5 P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance |
| 6770915 |
Light emitting element with multiple multi-layer reflectors and a barrier layers |
August 3, 2004 |
| In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is compos |
| 6621106 |
Light emitting diode |
September 16, 2003 |
| A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-si |
| 6617614 |
Semiconductor light-emitting device |
September 9, 2003 |
| The present invention relates to a semiconductor light-emitting device used for optical transmission (particularly for IEEE 1394) and displays and the like. More specifically, an object of the present invention is to provide a semiconductor light-emitting device capable of emitting the l |
| 6617606 |
Light-emitting semiconductor element |
September 9, 2003 |
| A light-emitting diode having an excellent high-speed response characteristic and capable of giving a large light output with a small variation of the light output during the operation is provided. In the light-emitting diode, an active layer comprising a single quantum well layer of |
| 6548824 |
Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum |
April 15, 2003 |
| A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active |
| 6501101 |
Light emitting diode |
December 31, 2002 |
| A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency |
| 6468818 |
Method for producing a high-luminance semiconductor light-emitting device capable of operating a |
October 22, 2002 |
| A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When gr |
| 6465812 |
Semiconductor light emitting device |
October 15, 2002 |
| A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1) provided on the principal plane of the GaAs |
| 6433364 |
Semiconductor light emitting device capable of increasing light emitting efficiency |
August 13, 2002 |
| On an n-GaP substrate transparent against a radiation light of an InAlGaP based semiconductor element, a lattice distortion relaxation layer, a clad layer 13, an active layer, and a clad layer are created with InAlGaP. On top of the layers, there is formed an In.sub.x Ga.sub.1-x P curren |
| 6384430 |
Light emitting diode |
May 7, 2002 |
| A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than |
| 6265732 |
Light emitting diode |
July 24, 2001 |
| A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than |
| 6236477 |
Optical transmission and receiving module |
May 22, 2001 |
| An optical transmission and receiving module includes a light source; a light receiving element; and a light branching element for causing signal light from the light source to be incident on an optical fiber and causing signal light output from the optical fiber to be incident on the li |
| 6081540 |
Semiconductor light emitting device with high light emission efficiency |
June 27, 2000 |
| The invention provides a semiconductor light emitting device in which a light emitting layer is formed on a semiconductor substrate in a state of lattice mismatching with this semiconductor substrate, and by which light emission of high efficiency is obtained. A semiconductor material us |
| 5900642 |
Semiconductor light emitting device |
May 4, 1999 |
| On a first cladding layer formed of n-type Al.sub.0.7 Ga.sub.0.3 P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al.sub.0.1 Ga.sub.0.9 P doped with nitrogen and 50 b |
| 5854089 |
Semiconductor device by selectively controlling growth of an epitaxial layer without a mask |
December 29, 1998 |
| A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconduc |
| 5777349 |
Semiconductor light emitting device |
July 7, 1998 |
| A semiconductor light emitting device includes: a compound semiconductor substrate of a first conductive type; a multilayer structure formed on the compound semiconductor substrate, the multilayer structure including at least an active layer for emitting light, a lower cladding layer of |
| 5751014 |
Semiconductor light emitting device |
May 12, 1998 |
| On a first cladding layer formed of n-type Al.sub.0.7 Ga.sub.0.3 P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al.sub.0.1 Ga.sub.0.9 P doped with nitrogen and 50 b |
| 5581116 |
Semiconductor device manufactured by selectively controlling growth of an epitaxial layer withou |
December 3, 1996 |
| A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconduc |
| 5404031 |
Semiconductor light emitting device with current confining layer |
April 4, 1995 |
| A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface |
| 5309001 |
Light-emitting diode having a surface electrode of a tree-like form |
May 3, 1994 |
| A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the seco |
| 5228047 |
Semiconductor laser device and a method for producing the same |
July 13, 1993 |
| A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of |
| 5031991 |
Optical coupling circuit element |
July 16, 1991 |
| An optical coupling circuit element providing one transparent substrate, a first micro Fresnel lens formed on one side surface of said substrate, and a second micro Fresnel lens formed on the other side surface of said substrate, so that coherent light incident into said first micro Fres |
| 4927371 |
Socket for semiconductor device |
May 22, 1990 |
| A socket for a semiconductor device comprises receiving holes to which lead pins of the semiconductor device are inserted, and conductive coupling portions for connecting the receiving holes and conductive portions of a circuit board. The socket is placed on a circuit board and the condu |
