| Patent Number |
Title Of Patent |
Date Issued |
| 7420249 |
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating |
September 2, 2008 |
| A semiconductor device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer surrounding the first semiconductor layer, the second semiconductor layer being formed on the semiconductor substrate with one of an insulating film and a cavity |
| 7381389 |
Wet gas purification method and system for practicing the same |
June 3, 2008 |
| A wet gas purification method is provided for removing ammonia from a heavy oil gasification gas, such as coal. The method principally involves a washing step during which absorbent is charged into the gas to absorb ammonia and an ammonia treating step wherein absorbent discharged from |
| 7323748 |
Semiconductor device having epitaxial layer |
January 29, 2008 |
| A semiconductor device includes a substrate having first and second regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first |
| 7294562 |
Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of m |
November 13, 2007 |
| A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal s |
| 7285825 |
Element formation substrate for forming semiconductor device |
October 23, 2007 |
| A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are sel |
| 7265017 |
Method for manufacturing partial SOI substrates |
September 4, 2007 |
| There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate being provided with a boundary region formed between the SOI region and the non-SOI regi |
| 7187035 |
Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrat |
March 6, 2007 |
| A method of manufacturing a semiconductor device substrate is disclosed, which comprises forming a mask layer patterned on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the |
| 7148543 |
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation |
December 12, 2006 |
| A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the bound |
| 7122864 |
Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semi |
October 17, 2006 |
| A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal s |
| 7112822 |
Semiconductor device using partial SOI substrate and manufacturing method thereof |
September 26, 2006 |
| A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting |
| 7095081 |
Semiconductor device and manufacturing method thereof |
August 22, 2006 |
| A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first |
| 7075169 |
Semiconductor device having a hollow region and method of manufacturing the same |
July 11, 2006 |
| A hollow region is formed in a silicon substrate. A plurality of openings formed in the silicon layer on the hollow region is filled with a buried film. The bottom portion of the hollow region is formed with a plurality of silicon pillars, which support the silicon layer. |
| 7071039 |
Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and |
July 4, 2006 |
| A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between |
| 7057259 |
Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device |
June 6, 2006 |
| A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products. |
| 7049661 |
Semiconductor device having epitaxial layer |
May 23, 2006 |
| A semiconductor device includes a substrate having first to fourth regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first |
| 7019365 |
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating |
March 28, 2006 |
| A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cav |
| 7018904 |
Semiconductor chip having multiple functional blocks integrated in a single chip and method for |
March 28, 2006 |
| A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boun |
| 7005115 |
Gas combustion treatment method and apparatus therefor |
February 28, 2006 |
| A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen o |
| 6956265 |
Semiconductor device and method for manufacturing partial SOI substrates |
October 18, 2005 |
| There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate being provided with a boundary region formed between the SOI region and the non-SOI region a |
| 6933590 |
Semiconductor device comprising plurality of semiconductor areas having the same top surface and |
August 23, 2005 |
| A convex polycrystalline silicon film is formed on a handle wafer. A semiconductor layer is formed on the polycrystalline silicon film. The semiconductor is thinner on its areas in which the convex polycrystalline silicon film is formed and is thicker on its areas in which the convex |
| 6906384 |
Semiconductor device having one of patterned SOI and SON structure |
June 14, 2005 |
| A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor laye |
| 6855976 |
Semiconductor device using partial SOI substrate and manufacturing method thereof |
February 15, 2005 |
| A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting su |
| 6835981 |
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation |
December 28, 2004 |
| A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary |
| 6770119 |
Mercury removal method and system |
August 3, 2004 |
| The present invention provides a mercury removal method which can effectively remove very small amounts of mercury components present in a gas during wet gas purification such as coal or heavy oil gasification gas purification and petroleum refining. A mercury removal method for the |
| 6630714 |
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating |
October 7, 2003 |
| A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cav |
| 6531754 |
Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and |
March 11, 2003 |
| A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between |
