| Patent Number |
Title Of Patent |
Date Issued |
| 5902395 |
Method for feeding granular silicon material, feed pipe used in the method, and method of manufa |
May 11, 1999 |
| In a pulling apparatus operated according to the multi-pulling method or CCZ method, granular silicon material is first fed to a feed pipe from a feeder so as to form stagnation of the granular silicon material in the feed pipe. The feeding of the granular silicon material from the feede |
| 5900055 |
Method of manufacturing silicon monocrystal by continuously charged Czochralski method |
May 4, 1999 |
| A silicon monocrystal is manufactured according to the continuously charged Czochralski method in which a double crucible is used which includes an outer crucible and an inner crucible which communicate with each other through pores. A dopant is charged to the silicon melt stored in the |
| 5876496 |
Method for feeding a granular raw material and feeding apparatus |
March 2, 1999 |
| A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the |
| 5868835 |
Apparatus for recharging of silicon granules in a czochralski single crystal growing operation |
February 9, 1999 |
| A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or |
| 5779790 |
Method of manufacturing a silicon monocrystal |
July 14, 1998 |
| In a method of manufacturing a silicon monocrystal using the Czochralski method, a seed crystal is brought into contact with silicon melt and is then pulled such that after a neck portion is formed, a silicon monocrystal is grown below the neck portion. The crystal has a hollow porti |
| 5733368 |
Method of manufacturing silicon monocrystal using continuous czochralski method |
March 31, 1998 |
| In a method of manufacturing a silicon monocrystal using a continuous Czochralski method, a silicon monocrystal is pulled from a silicon melt in a crucible while a silicon material is fed to the crucible. Supply of the silicon material is suspended until the temperature distribution of t |
| 5690733 |
Method for recharging of silicon granules in a Czochralski single crystal growing operation |
November 25, 1997 |
| A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or |
