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Masaki Nagahara Patents |
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Inventor: Nagahara; Masaki
Address: Yamanashi, JP
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6768147 |
Semiconductor device and method of fabricating the same |
July 27, 2004 |
| A compound semiconductor device includes a gate electrode, a drain electrode, and a source electrode, and a p-type semiconductor layer provided between the gate electrode and the drain electrode. The p-type semiconductor layer has a lower acceptor concentration on a drain side thereo |
| 6586813 |
High-speed compound semiconductor device operable at large output power with minimum leakage cur |
July 1, 2003 |
| A compound semiconductor device includes a cap layer formed on a channel layer and an insulating film formed on the cap layer, and a .GAMMA.-shaped gate electrode is provided in a gate recess opening, wherein an extension part of the .GAMMA.-shaped gate electrode extends over the insulat |
| 5949095 |
Enhancement type MESFET |
September 7, 1999 |
| A carrier transfer layer of compound semiconductor material is disposed on or over a support substrate, and a gate electrode of conductive material is disposed on or over the carrier transfer layer at a partial region thereof. A cap layer of non-doped compound semiconductor material is |
| 4747083 |
Semiconductor memory with segmented word lines |
May 24, 1988 |
| A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines and each of the word line segments is driven by an individual private word driver. The |
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