| Patent Number |
Title Of Patent |
Date Issued |
| 7446351 |
Transistor structures and transistors with a germanium-containing channel |
November 4, 2008 |
| A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped, silicon-containing channel layer. The first and second channel layers may contain SiGe or, alternatively, Si only. Another transistor structure include |
| 7445973 |
Transistor surround gate structure with silicon-on-insulator isolation for memory cells, memory |
November 4, 2008 |
| A transistor surround gate structure and a method of forming thereof on a semiconductor assembly are described. The transistor surround gate structure is formed on a partial silicon-on-insulator in one direction and on a full silicon-on insulator in a second direction and may be scal |
| 7443006 |
Photon amplification of image sensors |
October 28, 2008 |
| A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted to charge by the ph |
| 7439594 |
Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors |
October 21, 2008 |
| A stacked non-volatile memory device uses amorphous silicon based thin film transistors stacked vertically. Each layer of transistors or cells is formed from a deposited a-Si channel region layer having a predetermined concentration of carbon to form a carbon rich silicon film or sil |
| 7439479 |
Photonic crystal-based filter for use in an image sensor |
October 21, 2008 |
| The invention, in various exemplary embodiments, incorporates a photonic crystal filter into an image sensor. The photonic crystal filter comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart from each o |
| 7439155 |
Isolation techniques for reducing dark current in CMOS image sensors |
October 21, 2008 |
| Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing |
| 7427798 |
Photonic crystal-based lens elements for use in an image sensor |
September 23, 2008 |
| The invention, in various exemplary embodiments, incorporates a photonic crystal lens element into an image sensor. The photonic crystal lens element comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart |
| 7425461 |
Photon amplification for image sensors |
September 16, 2008 |
| A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted to charge by the ph |
| 7418161 |
Photonic crystal-based optical elements for integrated circuits and methods therefor |
August 26, 2008 |
| Exemplary embodiments of the invention provide photonic crystal-based optical elements for integrated circuits. A photonic crystal optical device comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart fro |
| 7417272 |
Image sensor with improved dynamic range and method of formation |
August 26, 2008 |
| Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first |
| 7408237 |
Photonic crystal-based lens elements for use in an image sensor |
August 5, 2008 |
| The invention, in various exemplary embodiments, incorporates a photonic crystal lens element into an image sensor. The photonic crystal lens element comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart |
| 7390685 |
Ultra-shallow photodiode using indium |
June 24, 2008 |
| The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss. |
| 7385238 |
Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transisto |
June 10, 2008 |
| A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage. |
| 7372484 |
Method and apparatus for reducing effects of dark current and defective pixels in an imaging dev |
May 13, 2008 |
| A method and apparatus for identifying and compensating for the effects of defective pixels in high resolution digital cameras having image processing apparatus. The apparatus includes a storage system for storing data corresponding to either a dark current reference image and a white |
| 7358161 |
Methods of forming transistor devices associated with semiconductor-on-insulator constructions |
April 15, 2008 |
| The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the in |
| 7335962 |
Photonic crystal-based lens elements for use in an image sensor |
February 26, 2008 |
| The invention, in various exemplary embodiments, incorporates a photonic crystal lens element into an image sensor. The photonic crystal lens element comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart |
| 7335958 |
Tailoring gate work-function in image sensors |
February 26, 2008 |
| Embodiments of the invention provide a method of forming a pixel cell and the resultant pixel cell a photo-conversion device formed at a surface of a substrate and a transistor adjacent to the photo-conversion device. The transistor comprises a gate overlying a channel region. The gate |
| 7332790 |
Semiconductor device having an active area partially isolated by a lateral cavity |
February 19, 2008 |
| A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep imp |
| 7332767 |
High density memory devices having improved channel widths and cell size |
February 19, 2008 |
| A memory device having decreased cell size and having transistors with increased channel widths. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a conductive layer to form a channel through the pillars. The current path through the ch |
| 7315014 |
Image sensors with optical trench |
January 1, 2008 |
| A device and method for providing an optical trench structure for a pixel which guides incoming light onto the photosensor of the pixel. The optical trench structure has an optically reflecting barrier that substantially mitigates optical crosstalk. The optical trench structure is ma |
| 7303938 |
Gated isolation structure for imagers |
December 4, 2007 |
| Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of an image sensor. The isolation methods also include forming an isolation gate over subs |
| 7297995 |
Transparent metal shielded isolation for image sensors |
November 20, 2007 |
| An isolation region formed in a substrate and lined with a transparent metal layer. The isolation region provides isolation between adjacent active areas of an integrated circuit structure, for example the inventive region may provide isolation between pixels of a pixel array. Utiliz |
| 7285796 |
Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels |
October 23, 2007 |
| An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel c |
| 7282409 |
Isolation structure for a memory cell using Al.sub.2O.sub.3 dielectric |
October 16, 2007 |
| The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell. An aluminum oxide (Al2O3) is used as a gate |
| 7280729 |
Semiconductor constructions and light-directing conduits |
October 9, 2007 |
| The invention includes optical signal conduits having rare earth elements incorporated therein. The optical signal conduits can, for example, contain rare earth elements incorporated within a dielectric material matrix. For instance, erbium or cerium can be within silicon nanocrystals |
| 7279770 |
Isolation techniques for reducing dark current in CMOS image sensors |
October 9, 2007 |
| A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first portion. The first width is |
| 7279764 |
Silicon-based resonant cavity photodiode for image sensors |
October 9, 2007 |
| An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not |
| 7279395 |
Suppression of dark current in a photosensor for imaging |
October 9, 2007 |
| A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers. |
| 7276752 |
Methods of forming integrated circuits, and DRAM circuitry memory cells |
October 2, 2007 |
| This invention includes methods of forming integrated circuits, and includes DRAM circuitry memory cells. In one implementation, a method of forming an integrated circuit includes forming a trench isolation mask over a semiconductor substrate. The trench isolation mask defines an act |
| 7273797 |
Methods of forming semiconductor-on-insulator constructions |
September 25, 2007 |
| The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the in |
| 7271025 |
Image sensor with SOI substrate |
September 18, 2007 |
| An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel. The photodiode has an increased fill factor due to its increased size relative to the pixel. |
| 7265328 |
Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled |
September 4, 2007 |
| A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical guide consists of an optically reflecting barrier formed as a trench that mitigates against |
| 7253493 |
High density access transistor having increased channel width and methods of fabricating such de |
August 7, 2007 |
| A memory device having decreased cell size and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a p |
| 7250591 |
Photonic crystal-based filter for use in an image sensor |
July 31, 2007 |
| The invention, in various exemplary embodiments, incorporates a photonic crystal filter into an image sensor. The photonic crystal filter comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart from each o |
| 7239003 |
Isolation techniques for reducing dark current in CMOS image sensors |
July 3, 2007 |
| Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing |
| 7230343 |
High density memory array having increased channel widths |
June 12, 2007 |
| A memory array having decreased cell sizes and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a p |
| 7230312 |
Transistor having vertical junction edge and method of manufacturing the same |
June 12, 2007 |
| Techniques for forming devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an oxide. Cavities may be formed in the oxide and filled with a conductive material, such a heavily doped polysilicon. Ve |
| 7226803 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method |
June 5, 2007 |
| A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5. |
| 7224020 |
Integrated circuit device having non-linear active area pillars |
May 29, 2007 |
| An integrated circuit device having non-linear active area pillars. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a conductive layer to form a channel |
| 7223960 |
Image sensor, an image sensor pixel, and methods of forming the same |
May 29, 2007 |
| A semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor. Semiconductor image sensor pixel cells using varied metal mesh filters may be arranged in a Bayer pattern for color |
| 7217589 |
Deep photodiode isolation process |
May 15, 2007 |
| A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is formed by conducting a |
| 7195947 |
Photodiode with self-aligned implants for high quantum efficiency and method of formation |
March 27, 2007 |
| A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The |
| 7187018 |
Reduced barrier photodiode/transfer gate device structure of high efficiency charge transfer and |
March 6, 2007 |
| A pixel cell having a reduced potential barrier near a region where a gate and a photodiode are in close proximity to one another, and a method for forming the same are disclosed. Embodiments of the invention provide a pixel cell comprising a substrate. A gate of a transistor is formed a |
| 7170117 |
Image sensor with improved dynamic range and method of formation |
January 30, 2007 |
| Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first |
| 7164182 |
Pixel with strained silicon layer for improving carrier mobility and blue response in imagers |
January 16, 2007 |
| An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. |
| 7160788 |
Methods of forming integrated circuits |
January 9, 2007 |
| This invention includes methods of forming integrated circuits, and includes DRAM circuitry memory cells. In one implementation, a method of forming an integrated circuit includes forming a trench isolation mask over a semiconductor substrate. The trench isolation mask defines an act |
| 7151285 |
Transistor structures and transistors with a germanium-containing channel |
December 19, 2006 |
| A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped, silicon-containing channel layer. The first and second channel layers may contain SiGe or, alternatively, Si only. Another transistor structure include |
| 7148525 |
Using high-k dielectrics in isolation structures method, pixel and imager device |
December 12, 2006 |
| An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photod |
| 7145189 |
Photon amplification for image sensors |
December 5, 2006 |
| A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted to charge by the ph |
| 7141841 |
Image sensor having a transistor for allowing increased dynamic range |
November 28, 2006 |
| Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first |
