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Toshiyo Motozima Patents |
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Inventor: Motozima; Toshiyo
Address: Yokohama, JP
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5382549 |
Method of manufacturing polycrystalline silicon having columnar orientation |
January 17, 1995 |
| In a semiconductor device, the polysilicon resistor or electrode formed of a polysilicon film has a columnar crystalline orientation vertical to the surface of the semiconductor substrate. Thus, the variation in grain size due to the subsequent heat treatment is small, and therefore, the |
| 5102826 |
Method of manufacturing a semiconductor device having a silicide layer |
April 7, 1992 |
| According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with |
| 4910170 |
Method of manufacturing semiconductor device |
March 20, 1990 |
| In the invention, the width of the emitter contact layer is determined in accordance with the width of a first side wall, and the junction distance between a base contact layer and the emitter contact layer is determined in accordance with the width of a second side wall. The junction di |
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