| Patent Number |
Title Of Patent |
Date Issued |
| 7357837 |
GaN single crystal substrate and method of making the same |
April 15, 2008 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 7354477 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crys |
April 8, 2008 |
| A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted |
| 7327770 |
Nitride semiconductor laser device |
February 5, 2008 |
| To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface |
| 7303630 |
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crys |
December 4, 2007 |
| Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions, accumulate the d |
| 7176499 |
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting devi |
February 13, 2007 |
| When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first |
| 7112826 |
Single crystal GaN substrate semiconductor device |
September 26, 2006 |
| Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and m |
| 7105865 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate |
September 12, 2006 |
| Seeds are implanted in a regular pattern upon an undersubstrate. An Al.sub.xIn.sub.yGa.sub.1-x-yN (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0<x+y.ltoreq.1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits ab |
| 7091056 |
Method of manufacturing a semiconductor light emitting device, semiconductor light emitting devi |
August 15, 2006 |
| When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III V compound semiconductor substrate composed of a first |
| 7087114 |
Single crystal GaN substrate, method of growing single crystal GaN and method of producing singl |
August 8, 2006 |
| A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted |
| 7015058 |
Method for fabricating a group III nitride semiconductor laser device |
March 21, 2006 |
| A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical wavegu |
| 7012318 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
March 14, 2006 |
| Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan |
| 6812496 |
Group III nitride semiconductor laser device |
November 2, 2004 |
| A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical wavegu |
| 6773504 |
Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium |
August 10, 2004 |
| Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan |
| 6693021 |
GaN single crystal substrate and method of making the same |
February 17, 2004 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 6667184 |
Single crystal GaN substrate, method of growing same and method of producing same |
December 23, 2003 |
| Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make |
| 6509651 |
Substrate-fluorescent LED |
January 21, 2003 |
| A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The s |
| 6468882 |
Method of producing a single crystal gallium nitride substrate and single crystal gallium nitrid |
October 22, 2002 |
| GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading disloca |
| 6468347 |
Method of growing single crystal GaN, method of making single crystal GaN substrate and single c |
October 22, 2002 |
| A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and |
| 6413627 |
GaN single crystal substrate and method of producing same |
July 2, 2002 |
| A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a |
| 6387722 |
Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a |
May 14, 2002 |
| The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 .mu.m or more and a method for preparing it. |
| 6270587 |
Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate an |
August 7, 2001 |
| The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 .mu.m or more and a method for preparing it. |
| 6031252 |
Epitaxial wafer and method of preparing the same |
February 29, 2000 |
| An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a |
| 5970314 |
Process for vapor phase epitaxy of compound semiconductor |
October 19, 1999 |
| A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0<x<1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a react |
| 5962875 |
Light emitting device, wafer for light emitting device, and method of preparing the same |
October 5, 1999 |
| A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity |
| 5834325 |
Light emitting device, wafer for light emitting device, and method of preparing the same |
November 10, 1998 |
| A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity |
