| Patent Number |
Title Of Patent |
Date Issued |
| 5442221 |
Hall effect sensor |
August 15, 1995 |
| A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the |
| 5281836 |
Semiconductor sensor with perpendicular N and P-channel MOSFET's |
January 25, 1994 |
| The invention relates to sensors having field effect semiconductors. The sensor of the invention comprises a ring oscillator constituted by an odd number of CMOS inverters disposed in a zone sensitive to the physical property to be measured. In order to increase the sensitivity of the |
| 5223444 |
Method for making a pressure sensor of the semiconductor-on-insulator type |
June 29, 1993 |
| The method of making a pressure sensor formed of semiconductor material on an insulating support, i.e., as a semiconductor-on-silicon, is described. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs |
| 5187984 |
Hydrostatic pressure transducer |
February 23, 1993 |
| A monolithic pressure and/or temperature transducer comprises at least two sensitive semiconductor layers of III-V material sensitive to pressure and to temperature and supported by a common substrate of III-V material, which two layers comprise: a first layer doped with donor type impur |
| 4965697 |
Solid state pressure sensors |
October 23, 1990 |
| Solid state pressure sensors based upon aluminum gallium arsenide devices are disclosed. One embodiment uses a TEGFET as a hydrostatic pressure sensor. By adjustment of the gate voltage, it is possible to vary the operating conditions of the sensor, so as to adapt it dynamically to p |
