| Patent Number |
Title Of Patent |
Date Issued |
| 7383733 |
Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching d |
June 10, 2008 |
| A method and apparatus for detecting a high pressure condition within an interrupter includes introducing high intensity ultrasonic sound into the outer wall of a vacuum interrupter through a sonic wave guide, then listening for the reflected and retransmitted response signals. The c |
| 7313964 |
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical d |
January 1, 2008 |
| A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shape |
| 7302854 |
Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical d |
December 4, 2007 |
| A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows or flexible diaphragm. The position at high pressures can be detected optically by the interruption or reflection of light beams, |
| 7048837 |
End point detection for sputtering and resputtering |
May 23, 2006 |
| Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while a |
| 6933021 |
Method of TiSiN deposition using a chemical vapor deposition (CVD) process |
August 23, 2005 |
| A method of forming a titanium silicide nitride (TiSiN) layer on a substrate id described. The titanium silicide nitride (TiSiN) layer is formed by providing a substrate to a process chamber and treating the substrate with a silicon-containing gas. A titanium nitride layer is formed |
| 6607976 |
Copper interconnect barrier layer structure and formation method |
August 19, 2003 |
| A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W.sub.X N] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric |
| 6518176 |
Method of selective formation of a barrier layer for a contact level via |
February 11, 2003 |
| A contact level via and a method of performing selective deposition of a barrier layer to form a contact level via for selective aluminum metallization. Specifically, the method forms a self-aligned silicide region by depositing titanium atop a structure containing a contact level vi |
| 6509274 |
Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate |
January 21, 2003 |
| A method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate that can compensate for some misalignment between the filled vias and the lines. By alternately depositing liner-barrier layers and aluminum layers on the substrate, different etch chemistries |
| 6500742 |
Construction of a film on a semiconductor wafer |
December 31, 2002 |
| The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alter |
| 6458684 |
Single step process for blanket-selective CVD aluminum deposition |
October 1, 2002 |
| The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invent |
| 6444036 |
Construction of a film on a semiconductor wafer |
September 3, 2002 |
| The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alter |
| 6251758 |
Construction of a film on a semiconductor wafer |
June 26, 2001 |
| The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alter |
| 6120844 |
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer |
September 19, 2000 |
| The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer thereover to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer is for |
| 6077781 |
Single step process for blanket-selective CVD aluminum deposition |
June 20, 2000 |
| The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron aperture width applications. In one aspect of the invention, |
| 6071572 |
Forming tin thin films using remote activated specie generation |
June 6, 2000 |
| In a vapor deposition chamber which holds a substrate for processing, a method including the steps of forming a layer of material on the surface of the substrate, wherein the layer of material is made of Ti atoms; remotely activating a source gas containing nitrogen so as to produce |
| 6066358 |
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer |
May 23, 2000 |
| The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of conducting layers to form continuous, void-free interconnects in sub-half micron, high aspect ratio aperture width applications and hig |
| 5989999 |
Construction of a tantalum nitride film on a semiconductor wafer |
November 23, 1999 |
| The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing ma |
| 5943600 |
Treatment of a titanium nitride layer to improve resistance to elevated temperatures |
August 24, 1999 |
| A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the |
| 5650052 |
Variable cell size collimator |
July 22, 1997 |
| Sputtering apparatus and method suitable for forming a step coating on a workpiece. A workpiece is supported in a chamber, particles are emitted from a sputtering source, and the particles are passed through a collimating filter having a plurality of transmissive cells positioned bet |
| 5431799 |
Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generatio |
July 11, 1995 |
| A plasma deposition system for sputter depositing material from a target onto a wafer, the system including a vacuum chamber; a platform for holding the wafer during plasma processing; a source onto which the target is mounted and for generating a plasma in the chamber during operation; |
| 4756810 |
Deposition and planarizing methods and apparatus |
July 12, 1988 |
| A layer of a substance such as an aluminum alloy is deposited, preferably by sputtering, onto a surface of a substrate such as a semiconductor wafer. The deposited substance is redistributed by bombarding the layer with ions. The ion bombardment may be induced by applying low frequency R |
| 4717461 |
System and method for processing workpieces |
January 5, 1988 |
| A method of processing a plurality of semiconductor wafers from a wafer cassette including a wafer transfer housing and one or more processing chambers. A wafer is removed from its cassette and transported through the transfer housing into one or more processing chambers for etching, |
