An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at a selected portion (e.g. an end portion) of the extended body region, so as to provide both a body tie access location wh
Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include the one or more parasitic isolation devices and/
A MOS/SOI field-effect transistor is made by applying a layer of a photoresist over the surface of a single-crystalline silicon layer which is on a substrate of an insulating material, such as sapphire. The surface of the silicon layer is along a (100) crystallographic plane. The pho
