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Yuichiro Morozumi Patents |
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Inventor: Morozumi; Yuichiro
Address: Tokyo, JP
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7368384 |
Film formation apparatus and method of using the same |
May 6, 2008 |
| A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride |
| 7041546 |
Film forming method for depositing a plurality of high-k dielectric films |
May 9, 2006 |
| In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed betwe |
| 6313047 |
MOCVD method of tantalum oxide film |
November 6, 2001 |
| Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the proce |
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