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Victor Moroz Patents
Inventor:
Moroz; Victor
Address:
Saratoga, CA
No. of patents:
5
Patents:




Patent Number Title Of Patent Date Issued
7413957 Methods for forming a transistor August 19, 2008
Methods are provided for depositing materials in forming semiconductor devices on a substrate, such as metal oxide transistors. In one embodiment, the invention generally provides a method of processing a substrate including forming a gate dielectric on a substrate having a first con
7302375 Simulation of processes, devices and circuits by a modified newton method November 27, 2007
Roughly described, a method for numerically solving a system of equations of the form 0=F(X), for a solution vector X which involves choosing a starting value X.sub.0 and iterating X.sub.n+1=X.sub.n-[F'(X.sub.n)+.sigma..sub.nDiag F'(X.sub.n)].sup.-1F(X.sub.n). In this iteration, at l
7265008 Method of IC production using corrugated substrate September 4, 2007
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a "corrugated substrate"), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be r
7247887 Segmented channel MOS transistor July 24, 2007
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a "corrugated substrate"), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be r
7190050 Integrated circuit on corrugated substrate March 13, 2007
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a "corrugated substrate"), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be r


 
 
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