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Hidetoshi Morokuma Patents
Inventor:
Morokuma; Hidetoshi
Address:
Hitachinaka, JP
No. of patents:
21
Patents:




Patent Number Title Of Patent Date Issued
7439505 Scanning electron microscope October 21, 2008
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning
7381951 Charged particle beam adjustment method and apparatus June 3, 2008
A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a s
7365325 Method and apparatus for observing a specimen April 29, 2008
A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained.
7365322 Method and apparatus for arranging recipe of scanning electron microscope and apparatus for eval April 29, 2008
In order to provide an imaging-recipe arranging or creating apparatus and method adapted so that selection rules for automatic arrangement of an imaging recipe can be optimized by teaching in a SEM apparatus or the like, the imaging-recipe arranging or creating apparatus in this inve
7230243 Method and apparatus for measuring three-dimensional shape of specimen by using SEM June 12, 2007
The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of
7230239 Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching June 12, 2007
A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a va
7217925 Scanning electron microscope May 15, 2007
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction
7187345 Image forming method and charged particle beam apparatus March 6, 2007
An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After t
7173268 Method of measuring pattern dimension and method of controlling semiconductor device process February 6, 2007
This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduc
7164128 Method and apparatus for observing a specimen January 16, 2007
It is predicted that an observational direction (or an incident direction of an electron beam) in an observed image actually obtained has some errors compared to a set value. The error portion affects the analysis of the observed image later. Therefore, a convergent electron beam is
7009178 Scanning electron microscope March 7, 2006
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction
7002151 Scanning electron microscope February 21, 2006
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning
6929892 Method of monitoring an exposure process August 16, 2005
In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to a
6913861 Method of observing exposure condition for exposing semiconductor device and its apparatus and m July 5, 2005
Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effectiv
6909930 Method and system for monitoring a semiconductor device manufacturing process June 21, 2005
To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam ima
6897445 Scanning electron microscope May 24, 2005
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction
6803573 Scanning electron microscope October 12, 2004
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning
6791096 Process conditions change monitoring systems that use electron beams, and related monitoring met September 14, 2004
In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion
6791082 Process conditions change monitoring systems that use electron beams, and related monitoring met September 14, 2004
In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion
6713761 Scanning electron microscope March 30, 2004
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction
6627888 Scanning electron microscope September 30, 2003
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed.To accomplish the above object, the present invention provides a scanning


 
 
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