| Patent Number |
Title Of Patent |
Date Issued |
| 7424802 |
Steam engine |
September 16, 2008 |
| A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the |
| 7355207 |
Silicon carbide semiconductor device and method for manufacturing the same |
April 8, 2008 |
| A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer |
| 7335928 |
Semiconductor device having a metal conductor in ohmic contact with the gate region on the botto |
February 26, 2008 |
| A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region fo |
| 7268677 |
Information processing system |
September 11, 2007 |
| An information processing system for use in a vehicle includes a main body for various operations and a portable device in data communication with the main body. The portable device is installed in front of a seat, and has a speaker system for outputting an audible signal. A virtually |
| 7230283 |
Semiconductor device having a metal conductor in ohmic contact with the gate region on the botto |
June 12, 2007 |
| A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region fo |
| 7185491 |
Steam engine |
March 6, 2007 |
| A steam engine has a looped fluid container, in which working fluid is filled. A heating device, a cooling device and an output device are arranged at the fluid container. A lower side valve is provided at a fluid passage of the fluid container between the heating device and the outp |
| 7129176 |
Optical device having micro lens array and method for manufacturing the same |
October 31, 2006 |
| An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated wit |
| 7073331 |
Steam engine |
July 11, 2006 |
| In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain perio |
| 6973788 |
Steam engine |
December 13, 2005 |
| A stem engine has a fluid container, a heating device and a cooling device. The fluid container has an outer pipe having an upper closed end, and an inner pipe provided in the outer pipe and having a fluid inlet port through which the inside of the inner pipe is operatively communicated |
| 6938473 |
Apparatus for measuring flow amount |
September 6, 2005 |
| An airflow meter has a membrane type sensor element. The sensor element is supported on a support member so that a sensing surface of the sensor element is in parallel to the airflow direction. The airflow meter has at least one means for protecting the sensor element from dust such as |
| 6855981 |
Silicon carbide power device having protective diode |
February 15, 2005 |
| A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device inc |
| 6710435 |
Semiconductor device arrangement and method of fabricating the same |
March 23, 2004 |
| A semiconductor device arrangement includes a plurality of three-dimensional semiconductor units. Each of the three-dimensional semiconductor units includes a semiconductor chip in a shape of a rectangular parallelepiped having six surfaces, and semiconductor devices formed on at lea |
| 6696323 |
Method of manufacturing semiconductor device having trench filled up with gate electrode |
February 24, 2004 |
| In a semiconductor device, a p-type base region is provided in an n.sup.- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n.sup.+ -type source region extends in the p-type base region from the principal surface |
| 6630389 |
Method for manufacturing semiconductor device |
October 7, 2003 |
| In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050.degree. C. and 1150.degree. C. in a hydrogen atmosphere before the |
| 6525375 |
Semiconductor device having trench filled up with gate electrode |
February 25, 2003 |
| In a semiconductor device, a p-type base region is provided in an n.sup.- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n.sup.+ -type source region extends in the p-type base region from the principal surface |
| 6495883 |
Trench gate type semiconductor device and method of manufacturing |
December 17, 2002 |
| A semiconductor device has a dielectric strength for a gate oxide film at a trench bottom that is higher than that of side walls used for channels. An n.sup.+ 0 type substrate 1 having substrate plane orientation of (110) is prepared, and the side walls of a trench where channels are for |
| 6118152 |
Semiconductor device and method of manufacturing the same |
September 12, 2000 |
| A silicon layer provided in a silicon substrate through a buried oxide film includes a silicon island partitioned by a trench. A surface of the silicon island in the trench is covered with a side wall oxide film, and LDMOS transistors are formed in the trench. A first impurity-doped |
| 5777365 |
Semiconductor device having a silicon-on-insulator structure |
July 7, 1998 |
| A semiconductor device of SOI structure exhibits a excellent heat-radiating characteristic while assuring breakdown-voltage and element-isolating performance. A buried silicon oxide film having a thickness required by the breakdown-voltage of a semiconductor element is buried between a S |
