| Patent Number |
Title Of Patent |
Date Issued |
| 7180925 |
Semiconductor laser device and manufacturing method therefor |
February 20, 2007 |
| A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 .mu.m (about 0.5 .mu.m) on the whole surface of ridge portions of two semiconductor lase |
| 7034341 |
Semiconductor laser device having a multi-layer buffer layer |
April 25, 2006 |
| An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21 and thereafter etching is carried out until reaching an n-type AlGaAs clad layer 23 from the surface. Next, the n-type AlGaAs clad layer 23 is removed by etching with an etchant having selectivity to GaAs |
| 6969873 |
Nitride gallium compound semiconductor light emission device |
November 29, 2005 |
| A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising |
| 6967119 |
Semiconductor laser device and method of fabricating the same |
November 22, 2005 |
| There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabric |
| 6919217 |
Semiconductor laser device fabricating method |
July 19, 2005 |
| An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21, and thereafter, a non-doped GaAs protective layer 30 is formed. When the n-type substrate 21 is exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser 29, an impurity Zn |
| 6833044 |
Solvent-free two-component curable adhesive composition |
December 21, 2004 |
| The solvent-free two-component adhesive composition of the present invention is prepared by a polyol component (A) and a polyisocyanate component (B), wherein the composition comprises at least one polyol component having crystallinity and selected from the group consisting of a poly |
| 6611004 |
Gallium nitride based light emitting element |
August 26, 2003 |
| A gallium nitride based light emitting element includes an n type electrode formed on one main surface of an n type gallium nitride substrate, in which the area ratio of the n type electrode with respect to the area of the one main surface is set to be in the range of at least 5% and at |
| 6603146 |
Gallium nitride group compound semiconductor light-emitting device |
August 5, 2003 |
| A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from |
| 6538095 |
Solvent-free two-component curable adhesive composition |
March 25, 2003 |
| The solvent-free two-component adhesive composition of the present invention comprises a polyol component (A) and a polyisocyanate component (B), and the viscosity of the mixture at 80.degree. C. immediately after the point of time the components (A) and (B) are mixed together is 900 |
| 6097040 |
Semiconductor light emitting device that prevents current flow in a portion thereof directly und |
August 1, 2000 |
| A semiconductor light emitting device includes an insulating substrate; and a layered structure formed on the insulating substrate, the layered structure including at least a light emitting section, a positive electrode section, and a negative electrode section. A portion of the posi |
| 6009113 |
Semiconductor laser device having clad and contact layers respectively doped with Mg and method |
December 28, 1999 |
| A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer |
| 5932004 |
Semiconductor laser device having clad and contact layers respectively doped with MG and method |
August 3, 1999 |
| A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer |
| 5260231 |
Method for the production of a semiconductor laser |
November 9, 1993 |
| A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film f |
| 5208468 |
Semiconductor laser device with a sulfur-containing film provided between the facet and the prot |
May 4, 1993 |
| A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film f |
| 5206185 |
Semiconductor laser device |
April 27, 1993 |
| A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge |
| 5087587 |
Epitaxial growth process for the production of a window semiconductor laser |
February 11, 1992 |
| A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding |
| 5054031 |
Semiconductor laser device |
October 1, 1991 |
| A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge |
| 5042044 |
Semiconductor laser device, a semiconductor wafer |
August 20, 1991 |
| A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves |
| 5022037 |
Semiconductor laser device |
June 4, 1991 |
| A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an active layer for laser oscillation, and a pair of cleavage |
| 4984244 |
Semiconductor laser device |
January 8, 1991 |
| A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, |
| 4951290 |
Semiconductor laser device |
August 21, 1990 |
| A semiconductor laser device comprising an active layer that constitutes a laser-oscillating resonator, and an inner-striped channel in the resonating direction, light from the active layer being absorbed at both edges of the striped channel, resulting in an optical waveguide within the |
| 4937836 |
Semiconductor laser device and production method therefor |
June 26, 1990 |
| A semiconductor laser device, includes (1) a first semiconductor layer having a mesa-shaped stripe, (2) a current blocking layer applied on the first semiconductor layer except the top of the mesa-shaped stripe of the first semiconductor layer, the current blocking layer allowing the |
| 4926431 |
Semiconductor laser device which is stable for a long period of time |
May 15, 1990 |
| A semiconductor laser device comprises a substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the |
| 4891816 |
Integrated semiconductor laser device |
January 2, 1990 |
| An integrated semiconductor laser device comprising a plurality of semiconductor laser device elements, at least one of which has a means for preventing the injection of current in the vicinity of one facet or both facets. |
| 4879725 |
Semiconductor laser device having extended facet life |
November 7, 1989 |
| A semiconductor laser device comprises a p-type semiconductor substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which curr |
| 4878223 |
Semiconductor laser array device |
October 31, 1989 |
| A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substr |
| 4853936 |
Index guided semiconductor laser device |
August 1, 1989 |
| An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order tran |
| 4819245 |
Semiconductor laser device having substriped channels for forming an active layer which is thin |
April 4, 1989 |
| A semiconductor laser device comprises a substrate having a main striped channel for confining current therein and sub-striped channels formed in a parallel manner outside of the main striped channel. The width of the sub-striped channels is greater than that of the main striped channel. |
| 4819244 |
Semiconductor laser device |
April 4, 1989 |
| A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the |
| 4815089 |
Semiconductor laser |
March 21, 1989 |
| A semiconductor laser includes a front mirror facet and a rear mirror facet. An Al.sub.2 O.sub.3 film coating is formed on the front mirror facet by electron beam evaporation so that the front mirror facet has a reflectance between 10 and 20%. A multi-layered coating is formed on the |
| 4792960 |
Semiconductor laser |
December 20, 1988 |
| A semiconductor laser comprising a substrate for crystal growth having a striped channel, an active layer for laser oscillation, a cladding layer containing Mg which is in contact with said active layer at the side of said striped channel substrate. |
| 4791649 |
Semiconductor laser device |
December 13, 1988 |
| A multilayered crystal structure in a semiconductor laser device contains an active layer for laser oscillation on a V-stripe channeled substrate having a current-blocking layer thereon. The active layer further includes regions by means of which carriers within the active layer are prev |
| 4791636 |
Semiconductor laser device and a method for driving the same |
December 13, 1988 |
| A semiconductor laser device comprising a laser-oscillating optical waveguide composed of a control region which functions to absorb light and main regions which function to oscillate laser light, said control region being positioned in the center portion of said optical waveguide and sa |
| 4737962 |
Compound resonator type semiconductor laser device |
April 12, 1988 |
| A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that |
| 4730328 |
Window structure semiconductor laser |
March 8, 1988 |
| A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active l |
| 4720834 |
Internal-reflection-interference semiconductor laser device |
January 19, 1988 |
| An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the interna |
| 4686679 |
Window VSIS semiconductor laser |
August 11, 1987 |
| A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the |
| 4677633 |
Semiconductor laser with a two-striped channel |
June 30, 1987 |
| A semiconductor laser comprising a substrate having a two step-striped channel; and a double heterostructure-laser-operating area having successively a cladding layer, an active layer and a second cladding layer on the substrate. The two step-striped channels are composed of a first |
| 4418177 |
Thermosetting adhesive compositions and use |
November 29, 1983 |
| A thermosetting adhesive composition is disclosed which contains (a) a half-ester product of a saponified ethylene/vinyl ester copolymer with a dicarboxylic acid and (b) a solid or liquid epoxy resin, and this composition may further optionally contain a compound bearing two or more |
