| Patent Number |
Title Of Patent |
Date Issued |
| 7423902 |
Storage device and semiconductor apparatus |
September 9, 2008 |
| A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the low |
| 7385845 |
Composite storage circuit and semiconductor device having the same |
June 10, 2008 |
| The object of the present invention is to provide a composite storage circuit capable of executing a writing operation and reading operation at high speed, and as the result of that, a semiconductor apparatus capable of realizing an instant-on function and an instant-off function is |
| 7376801 |
Power saving data storage circuit, data writing method in the same, and data storage device |
May 20, 2008 |
| It is an object to provide, in a data storage circuit for storing data, a power saving data storage circuit and a data writing method in the data storage circuit, and, further, to provide a data storage device. Thus, in the present invention, reading out existing data stored in a storage |
| 7372718 |
Storage and semiconductor device |
May 13, 2008 |
| A storage device includes a storage element having characteristics such that the resistance value thereof changes from a high state to a low state as a result of an electrical signal higher than or equal to a first threshold signal being applied and changes from a low state to a high |
| 7242606 |
Storage apparatus and semiconductor apparatus |
July 10, 2007 |
| A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and |
| 7239539 |
Magnetic storage apparatus using ferromagnetic tunnel junction device |
July 3, 2007 |
| A magnetic storage apparatus capable of performing storage data to a ferromagnetic tunnel junction device surely and with a low electric consumption. In the present invention, a magnetic storage apparatus using a ferromagnetic tunnel junction device configured so as to perform writin |
| 7209379 |
Storage device and semiconductor device |
April 24, 2007 |
| A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and app |
| 7130224 |
Composite storage circuit and semiconductor device having the same composite storage circuit |
October 31, 2006 |
| An object of the present invention is to provide a compound storage circuit that includes a storage circuit including a volatile storage circuit and a nonvolatile storage circuit connected in parallel to each other and that is arranged to be capable of an instant-on function by stori |
| 7065332 |
Remote control receiving system |
June 20, 2006 |
| A remote control receiving circuit for receiving a remote control signal from a transmitter includes a header interrupt generation circuit that outputs a header interrupt signal when detecting the header of the signal, a data interrupt generation circuit that outputs a data interrupt |
| 7020010 |
Magnetic storage apparatus using ferromagnetic tunnel junction devices |
March 28, 2006 |
| A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier layer, respectively, |
