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Yasunori Miyazaki Patents
Inventor:
Miyazaki; Yasunori
Address:
Tokyo, JP
No. of patents:
11
Patents:




Patent Number Title Of Patent Date Issued
6978055 Optical modulator December 20, 2005
An optical modulator with lowered chirping without deterioration of extinction characteristic. An intermediate layer is interposed between a well layer and an n-side barrier layer and tensile strain is produced in the well layer. A relationship Ew<Em<Eb is established between a
6574379 Optical device and its manufacturing method June 3, 2003
An optical device having superior frequency characteristics and high optical axis stability. The back surfaces of an optical modulator and a pair of transmission lines are bonded to a pedestal with the transmission lines located on opposite sides of the optical modulator. Conductive bump
6574027 Optical modulator, and optical-modulator-intergrated laser diode June 3, 2003
An optical modulator which is suitable for use in high-speed optical communications and simultaneously satisfies demands for incident light of higher intensity and lower chirp. An absorption layer having a multi-quantum-well structure includes a well layer having a first bandgap ener
6021149 Optical semiconductor module February 1, 2000
An optical semiconductor module includes a substrate including a first plate member having strip lines for high-frequency signal transmission, located on a surface of the substrate and a second plate member including a feeding line on a surface, the first plate member having a loss angle
5906753 Method of making optical semi-conductor device May 25, 1999
A method of manufacturing an optical semiconductor device including forming an optical waveguide on a substrate and forming an alignment mark on the substrate simultaneously with the optical waveguide. The alignment marks do not transmit infrared light and, when the substrate is mounted
5790737 Optical semiconductor device August 4, 1998
A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said con
5717710 Optical semiconductor device February 10, 1998
In an optical semiconductor device including a DFB laser and a light absorption modulator, a semi-insulating semiconductor layer is disposed between a carrier blocking layer and a upper cladding layer, the upper cladding layer having an opposite conductivity type from that of the sem
5648977 Laser array device and method of fabricating the device July 15, 1997
An array type semiconductor laser device includes a foldable submount and a plurality of semiconductor lasers each having uppermost and lowermost layers mounted on the submount. The submount is folded into a polygonal shape having sides with a respective semiconductor laser mounted in th
5636235 Semiconductor laser device including columns of semiconductor lasers with non-central light emit June 3, 1997
A semiconductor laser device includes unit semiconductor lasers having facets and having side surfaces, active layers disposed in the respective unit semiconductor lasers so that the ends of the active layers are exposed to the facets of the respective unit semiconductor lasers and h
5602672 Light modulator module and method for fabricating light modulator module February 11, 1997
A light modulator module includes a submount; a semiconductor laser and a semiconductor light modulator having a signal input terminal integrated on the submount, the semiconductor laser outputting laser light and the semiconductor light modulator modulating the laser light in response t
5550855 Optical modulator August 27, 1996
In an optical modulator including a laser light source emitting laser light and a modulator, a modulation signal source for applying a modulation signal to the modulator, a signal processor for producing and outputting a signal in response to a change in the modulation signal, and a driv


 
 
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