| Patent Number |
Title Of Patent |
Date Issued |
| 5557116 |
Semiconductor laser device and resin layer |
September 17, 1996 |
| A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monito |
| 5260231 |
Method for the production of a semiconductor laser |
November 9, 1993 |
| A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film f |
| 5220571 |
Semiconductor laser device |
June 15, 1993 |
| A semiconductor laser device comprising a semiconductor laser chip emitting infrared laser beams in a predetermined direction and a visible light source emitting visible light beams in the same direction. The semiconductor laser chip and the visible light source are disposed close to |
| 5208468 |
Semiconductor laser device with a sulfur-containing film provided between the facet and the prot |
May 4, 1993 |
| A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film f |
| 5022037 |
Semiconductor laser device |
June 4, 1991 |
| A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an active layer for laser oscillation, and a pair of cleavage |
| 4951291 |
Semiconductor laser device with a protective film on the facets |
August 21, 1990 |
| A semiconductor laser device with a protective film on the facets, wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film of low refractive index and |
| 4911512 |
Waveguide type optical head |
March 27, 1990 |
| A waveguide type optical head comprises a thin film waveguide of semiconductor or dielectric substance formed on a semiconductor or dielectric substrate, an optical element with an optical signal processing function provided on the thin film waveguide, and a semiconductor laser fixed |
| 4864585 |
External cavity type semiconductor laser apparatus |
September 5, 1989 |
| An external cavity type semiconductor laser apparatus comprising a semiconductor laser device and an external reflector, which are mounted on a single mounting base with a distance therebetween, wherein laser light from the light-emitting rear facet of the laser device is reflected by th |
| 4860305 |
External cavity type semiconductor laser apparatus |
August 22, 1989 |
| An external cavity type semiconductor laser apparatus comprising a semiconductor laser device and an external cavity, which are mounted on a single mounting base with a space therebetween, wherein laser light emitted from the light-emitting rear facet of the laser device is reflected |
| 4829531 |
External resonator type semiconductor laser |
May 9, 1989 |
| The external resonator type semiconductor laser of the present invention includes a semiconductor laser element, a reflection member having a reflecting mirror surface for feeding back to the laser element a laser beam emitted from an emitting end surface of the semiconductor laser e |
| 4815089 |
Semiconductor laser |
March 21, 1989 |
| A semiconductor laser includes a front mirror facet and a rear mirror facet. An Al.sub.2 O.sub.3 film coating is formed on the front mirror facet by electron beam evaporation so that the front mirror facet has a reflectance between 10 and 20%. A multi-layered coating is formed on the |
| 4811350 |
Semiconductor laser apparatus |
March 7, 1989 |
| A semiconductor laser apparatus and housing are designed so that laser light leaving the housing through a window glass in the housing satisfies the following equation (3): ##EQU1## wherein d is the distance between the window glass and the laser light-emitting facet of the semic |
| 4806778 |
Micro-displacement measuring apparatus using a semiconductor laser |
February 21, 1989 |
| A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the |
| 4792962 |
A ring-shaped resonator type semiconductor laser device |
December 20, 1988 |
| A semiconductor laser device comprising: a ring-shaped resonator constituted by a square-shaped optical waveguide composed of four straight optical waveguide sides in which facing sides are positioned in a parallel manner and a reflecting mirror is formed at each of the four corners of |
| 4791636 |
Semiconductor laser device and a method for driving the same |
December 13, 1988 |
| A semiconductor laser device comprising a laser-oscillating optical waveguide composed of a control region which functions to absorb light and main regions which function to oscillate laser light, said control region being positioned in the center portion of said optical waveguide and sa |
| 4737962 |
Compound resonator type semiconductor laser device |
April 12, 1988 |
| A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that |
| 4730328 |
Window structure semiconductor laser |
March 8, 1988 |
| A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active l |
| 4655597 |
Micro-displacement measuring apparatus using a semiconductor laser |
April 7, 1987 |
| A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving the light from the semiconductor laser, and with the compound resonator system being constructed such that light |
| 4637029 |
Semiconductor laser |
January 13, 1987 |
| A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the s |
| 4592060 |
Semiconductor laser with active layer having reduced stress |
May 27, 1986 |
| A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by cladding layers, and a substrate upon w |
| 4569721 |
Method for the production of semiconductor lasers |
February 11, 1986 |
| A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) |
| 4545057 |
Window structure of a semiconductor laser |
October 1, 1985 |
| A window V-channeled substrate inner stripe semiconductor laser includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted |
