| Patent Number |
Title Of Patent |
Date Issued |
| 7368335 |
Semiconductor device and method of manufacturing the same |
May 6, 2008 |
| The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region |
| 7326604 |
Semiconductor device and method of manufacturing the same |
February 5, 2008 |
| In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain |
| 7316947 |
Method of manufacturing a semiconductor device |
January 8, 2008 |
| An object is to reduce the number of high temperature (equal to or greater than 600.degree. C.) heat treatment process steps and achieve lower temperature (equal to or less than 600.degree. C.) processes, and to simplify the process steps and increase throughput in a method of manufa |
| 7307282 |
Thin film transistors and semiconductor device |
December 11, 2007 |
| The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic |
| 7307007 |
Semiconductor device |
December 11, 2007 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 7306982 |
Method of manufacturing a semiconductor device |
December 11, 2007 |
| It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in |
| 7297978 |
Semiconductor thin film and semiconductor device |
November 20, 2007 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 7202119 |
Method of manufacturing semiconductor device |
April 10, 2007 |
| An orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is increased, a distortion thereof is suppressed, and a TFT using such a crystalline semiconductor film is provided. At the time of formation of the amorphous semiconductor |
| 7196400 |
Semiconductor device with enhanced orientation ratio and method of manufacturing same |
March 27, 2007 |
| An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a crystalline semiconduct |
| 7169689 |
Method of manufacturing a semiconductor device |
January 30, 2007 |
| Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is |
| 7160784 |
Method of manufacturing a semiconductor film with little warp |
January 9, 2007 |
| When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline |
| 7122450 |
Process for manufacturing a semiconductor device |
October 17, 2006 |
| A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconduc |
| 7052943 |
Method of manufacturing a semiconductor device |
May 30, 2006 |
| A technique of using a metal element that has a catalytic action over crystallization of a semiconductor film to obtain a crystalline semiconductor film and then effectively removing the metal element remaining in the film is provided. A first semiconductor film (104) having a crysta |
| 7034337 |
Semiconductor device and method of manufacturing the same |
April 25, 2006 |
| The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region |
| 7022590 |
Method for forming a semiconductor device using crystals of crystal growth |
April 4, 2006 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6979632 |
Fabrication method for thin-film semiconductor |
December 27, 2005 |
| The present invention has as its object to provide a technique of forming a surface of a thin-film semiconductor having corrugations and smoothing the same. This is achieved by a fabrication method for thin-film semiconductors which smooths a surface of a silicon film having corrugat |
| 6956235 |
Semiconductor device |
October 18, 2005 |
| The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing |
| 6872638 |
Method of manufacturing a semiconductor device |
March 29, 2005 |
| A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate |
| 6830994 |
Method of manufacturing a semiconductor device having a crystallized semiconductor film |
December 14, 2004 |
| The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmo |
| 6828587 |
Semiconductor device |
December 7, 2004 |
| Crystal orientation planes exist randomly in a crystalline silicon film manufactured by a conventional method, and the orientation ratio is low with respect to a specific crystal orientation. A semiconductor film having a high orientation ratio for the {101} lattice plane is obtained if |
| 6828179 |
Semiconductor device and method for manufacturing same |
December 7, 2004 |
| An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a crystalline semiconduct |
| 6822262 |
Semiconductor thin film and semiconductor device |
November 23, 2004 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 6812081 |
Method of manufacturing semiconductor device |
November 2, 2004 |
| An orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is increased, a distortion thereof is suppressed, and a TFT using such a crystalline semiconductor film is provided. At the time of formation of the amorphous semiconductor |
| 6808968 |
Method of manufacturing a semiconductor device |
October 26, 2004 |
| It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in |
| 6787807 |
Semiconductor device |
September 7, 2004 |
| The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing |
| 6770518 |
Method for manufacturing a semiconductor device |
August 3, 2004 |
| The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a |
| 6720575 |
Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller |
April 13, 2004 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6703265 |
Semiconductor device and method of manufacturing the same |
March 9, 2004 |
| The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region |
| 6693299 |
Semiconductor device and method of manufacturing the same |
February 17, 2004 |
| In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain |
| 6690068 |
Thin film transistors and semiconductor device |
February 10, 2004 |
| The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % |
| 6635929 |
Uniform thin film semiconductor device |
October 21, 2003 |
| A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influ |
| 6515299 |
Semiconductor device with rod like crystals and a recessed insulation layer |
February 4, 2003 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6506636 |
Method of manufacturing a semiconductor device having a crystallized amorphous silicon film |
January 14, 2003 |
| Contamination of an interface of respective films constituting a TFT due to an contaminant impurity in a clean room atmosphere becomes a great factor to lower the reliability of the TFT. Besides, when an impurity is added to a crystalline semiconductor film, its crystal structure is brok |
| 6495886 |
Semiconductor thin film and semiconductor device |
December 17, 2002 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 6388270 |
Semiconductor device and process for producing same |
May 14, 2002 |
| To provide a semiconductor device utilizing a semiconductor film having a high crystallinity by a production process having a high mass productivity.Upon crystallizing an amorphous silicon film 106, germanium is used as a catalyst element for accelerating the crystallization. A heat trea |
| 6337235 |
Semiconductor device and manufacturing method thereof |
January 8, 2002 |
| The object of the present invention is to develop a manufacturing process for fabricating thin film transistors by using a crystalline semiconductor film appropriately for the purpose, in which the crystalline semiconductor film is formed by using a catalyst which enables crystallization |
| 6326249 |
Semiconductor device and process for producing same |
December 4, 2001 |
| A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influ |
| 6294815 |
Semiconductor device |
September 25, 2001 |
| A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influ |
| 6107639 |
Semiconductor device with rod like crystals and a recessed insulation layer |
August 22, 2000 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6087679 |
Semiconductor thin film and semiconductor device |
July 11, 2000 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 5966596 |
Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel |
October 12, 1999 |
| Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first dielectric film is formed from silicon oxide on the amorphous silicon film. Holes are formed in |
