| Patent Number |
Title Of Patent |
Date Issued |
| 7223685 |
Damascene fabrication with electrochemical layer removal |
May 29, 2007 |
| The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a barrier layer deposited on the under-layer, and a conductive layer deposited in the featur |
| 7201784 |
Surfactant slurry additives to improve erosion, dishing, and defects during chemical mechanical |
April 10, 2007 |
| Slurries and methods for the chemical mechanical polishing of high density copper interconnects in a low k ILD are presented. In a particular embodiment of the present invention, a slurry for polishing copper is formed by combining a surfactant comprising an alkyl ethoxy organic acid |
| 7157378 |
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate |
January 2, 2007 |
| A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, forming a trench within the dielectric layer, and forming a high-k gate dielectric layer within the trench. After forming a first metal layer on the high-k gate d |
| 7109557 |
Sacrificial dielectric planarization layer |
September 19, 2006 |
| A method of forming a microelectronic structure and its associated structures is described. In one embodiment, a substrate is provided with a sacrificial layer disposed on a hard mask layer, and a metal layer disposed in a trench of the substrate and on the sacrificial layer. The met |
| 6909193 |
High pH slurry for chemical mechanical polishing of copper |
June 21, 2005 |
| A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siO.sub.2 abrasive, a (NH.sub.4).sub.2 S.sub.2 O.sub.8 oxidizer, a benzotriazole corrosion inhibit |
| 6908863 |
Sacrificial dielectric planarization layer |
June 21, 2005 |
| A method of forming a microelectronic structure and its associated structures is described. In one embodiment, a substrate is provided with a sacrificial layer disposed on a hard mask layer, and a metal layer disposed in a trench of the substrate and on the sacrificial layer. The met |
| 6852631 |
Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
February 8, 2005 |
| Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixtur |
| 6838383 |
Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
January 4, 2005 |
| Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixtur |
| 6825117 |
High PH slurry for chemical mechanical polishing of copper |
November 30, 2004 |
| A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO.sub.2 abrasive, a (NH.sub.4).sub.2 S.sub.2 O.sub.8 oxidizer, a benzotriazole corrosion inhibit |
| 6787061 |
Copper polish slurry for reduced interlayer dielectric erosion and method of using same |
September 7, 2004 |
| Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixtur |
| 6752844 |
Ceric-ion slurry for use in chemical-mechanical polishing |
June 22, 2004 |
| The invention provides a chemical-mechanical polishing slurry comprising a liquid, cerium ions as an oxidizer, an abrasive, and a pH increasing substance. The cerium ions are in the liquid in a quantity equal to the inclusion of at least 0.02 molar ammonium cerium nitrate in the liquid. |
| 6740591 |
Slurry and method for chemical mechanical polishing of copper |
May 25, 2004 |
| A copper polish slurry, for chemical mechanical polishing of copper and copper diffusion barriers may be formed by combining a chelating, organic acid buffer system such as citric acid and potassium citrate; and an abrasive, such as for example colloidal silica. Alternative copper polish |
| 6719920 |
Slurry for polishing a barrier layer |
April 13, 2004 |
| A slurry is described that comprises a mixture of between about 0.01 mole and about 0.1 mole per liter of an organic acid salt, between about 1% to about 20% by volume of an abrasive, and an oxidizer. |
| 6719614 |
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
April 13, 2004 |
| Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is |
| 6596640 |
Method of forming a raised contact for a substrate |
July 22, 2003 |
| The present invention includes a method of providing a first substrate; forming an insulator over the first substrate; forming an opening in the insulator; forming a conductor over the insulator and in the opening; removing the conductor over the insulator with a first chemical-mechanica |
| 6464568 |
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
October 15, 2002 |
| Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is |
| 6443814 |
Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
September 3, 2002 |
| Methods for the chemical-mechanical polishing (CMP) of copper layers on integrated circuits are described, along with the chemical compositions of various pre- and post-polishing solutions. In one embodiment, a pre-polish cleaning operation with a complexing organic acid buffer system is |
| 4790619 |
Apparatus comprising Raman-active optical fiber |
December 13, 1988 |
| Raman-active optical fiber having very large Raman cross section is disclosed. The fiber comprises glass that has two major components, a glass-forming first component (GeO.sub.2, SiO.sub.2, AsO.sub.1.5, or combinations thereof) and a heavy metal oxide second component (PbO, BiO.sub. |
