| Patent Number |
Title Of Patent |
Date Issued |
| 7431966 |
Atomic layer deposition method of depositing an oxide on a substrate |
October 7, 2008 |
| The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber |
| 7410898 |
Methods of fabricating interconnects for semiconductor components |
August 12, 2008 |
| In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening a |
| 7390746 |
Multiple deposition for integration of spacers in pitch multiplication process |
June 24, 2008 |
| Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precurso |
| 7329615 |
Atomic layer deposition method of forming an oxide comprising layer on a substrate |
February 12, 2008 |
| This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the de |
| 7282239 |
Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
October 16, 2007 |
| In one embodiment, the system includes a gas supply assembly having a first gas source, a first gas conduit coupled to the first gas source, a first valve assembly, a reaction chamber, and a gas distributor carried by the reaction chamber. The first valve assembly includes first and |
| 7279732 |
Enhanced atomic layer deposition |
October 9, 2007 |
| A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodim |
| 7253118 |
Pitch reduced patterns relative to photolithography features |
August 7, 2007 |
| Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography us |
| 7189642 |
Methods of fabricating interconnects including depositing a first material in the interconnect w |
March 13, 2007 |
| In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening a |
| 7172947 |
High dielectric constant transition metal oxide materials |
February 6, 2007 |
| A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the |
| 7119034 |
Atomic layer deposition method of forming an oxide comprising layer on a substrate |
October 10, 2006 |
| This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the de |
| 7071098 |
Methods of fabricating interconnects for semiconductor components including a through hole entir |
July 4, 2006 |
| In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening a |
| 7067438 |
Atomic layer deposition method of forming an oxide comprising layer on a substrate |
June 27, 2006 |
| This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate within the de |
| 6967154 |
Enhanced atomic layer deposition |
November 22, 2005 |
| A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodim |
| 6943106 |
Methods of fabricating interconnects for semiconductor components including plating solder-wetti |
September 13, 2005 |
| In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at |
| 6844260 |
Insitu post atomic layer deposition destruction of active species |
January 18, 2005 |
| Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the |
