| Patent Number |
Title Of Patent |
Date Issued |
| 7403552 |
High efficiency intersubband semiconductor lasers |
July 22, 2008 |
| An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the |
| 7256417 |
Type II quantum well mid-infrared optoelectronic devices |
August 14, 2007 |
| Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in |
| 6845116 |
Narrow lateral waveguide laser |
January 18, 2005 |
| As edge-emitting semiconductor laser incorporating a narrow waveguide design is disclosed. The narrow waveguide expands the lateral mode size, creates a large modal spot size, and insures higher-order modes are beyond cutoff. Separate current confinement allows the current injection regi |
| 6791104 |
Type II quantum well optoelectronic devices |
September 14, 2004 |
| Semiconductor optoelectronic devices such as diode lasers are formed on GaAs with an active region with a GaAsN electron quantum well layer and a GaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light |
| 6608849 |
Vertical-cavity surface-emitting semiconductor laser arrays |
August 19, 2003 |
| A vertical-cavity surface-emitting semiconductor laser array device includes a semiconductor substrate and a multilayer structure on the substrate that includes at least four core elements arranged in a two-dimensional rectangular array, with the core elements separated from one anot |
| 6396865 |
Vertical-cavity surface-emitting lasers with antiresonant reflecting optical waveguides |
May 28, 2002 |
| A vertical cavity surface emitting semiconductor laser is formed with a multilayer structure on a semiconductor substrate that includes an active region layer, a central core, and an antiresonant reflecting waveguide ring surrounding the central core. The ring includes a region formed to |
| 6363092 |
Narrow spectral width high power distributed feedback semiconductor lasers |
March 26, 2002 |
| High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower |
| 6229153 |
High peak current density resonant tunneling diode |
May 8, 2001 |
| A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in |
| 6219365 |
High performance aluminum free active region semiconductor lasers |
April 17, 2001 |
| The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate and includes an active region layer, confinement layers adjacent the active region layer, |
| 6195381 |
Narrow spectral width high-power distributed feedback semiconductor lasers |
February 27, 2001 |
| High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower |
| 6167073 |
High power laterally antiguided semiconductor light source with reduced transverse optical confi |
December 26, 2000 |
| A semiconductor structure for use as a laser or amplifier has a multilayer structure including a substrate, an active region, optical confinement and cladding layers on each side of the active region to surround the active region. The structure includes at least one core element at which |
| 5889805 |
Low-threshold high-efficiency laser diodes with aluminum-free active region |
March 30, 1999 |
| Semiconductor diode lasers include an aluminum free active region including at least one active layer having a general composition In.sub.(1-x) Ga.sub.x As.sub.y P.sub.(1-y) where 0.ltoreq.y.ltoreq.1; two confinement layers bounding the active region and having a general composition |
| 5606570 |
High power antiguided semiconductor laser with interelement loss |
February 25, 1997 |
| A semiconductor laser is formed with an array of a small number (two to ten) antiguide elements each containing a portion of the active region of the semiconductor laser. Interelement structures between the antiguide elements are formed to have a relatively high interelement loss coe |
| 5276700 |
2-D monolithic coherent semiconductor laser array |
January 4, 1994 |
| This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with r |
| 5272711 |
High-power semiconductor laser diode |
December 21, 1993 |
| A high-power semiconductor laser diode that employs a lateral antiresonant reflecting optical waveguide for generating a single-mode laser beam having an aperture spot size on the order of 4 to 8 microns. The lateral antiresonant reflecting optical waveguide is a negative-index waveguide |
| 5063570 |
Semiconductor laser arrays using leaky wave interarray coupling |
November 5, 1991 |
| A semiconductor laser array of antiguides having a large number of antiguide elements to provide relatively high optical power output with a high degree of coherence and array mode discrimination. The antiguide elements are grouped into array cells that are separated by interarray re |
| 5050180 |
Phase-locked arrays of coupled X-junctions |
September 17, 1991 |
| An array of semiconductor laser diodes having parallel waveguide elements, of which each adjacent pair is coupled together by an X-shaped waveguide junction having a connecting waveguide in which lateral modes are formed as a result of merging of the pair of waveguide elements. The waveg |
| 5038356 |
Vertical-cavity surface-emitting diode laser |
August 6, 1991 |
| A semiconductor diode laser device, and a related method for its fabrication, the laser being of the type from which light is emitted in a direction perpendicular to planar layers forming the device. The laser includes an active layer and cladding layers formed on a supporting substr |
| 4985897 |
Semiconductor laser array having high power and high beam quality |
January 15, 1991 |
| A semiconductor laser array with features providing good beam quality at high powers, first by employing a laterally unguided diffraction region in which light from a set of waveguides is re-imaged in accordance with the Talbot effect and two arrays of waveguides may be used to provide a |
| 4866724 |
Wide-waveguide interferometric array with interelement losses |
September 12, 1989 |
| A semiconductor laser diode array structure in which interelement losses are deliberately included, to favor operation at higher-order array modes of operation, and thereby avoid the disadvantage of beam broadening that results when lower-order array modes of operation are used at very h |
| 4860298 |
Phased-locked array of semiconductor lasers using closely spaced antiguides |
August 22, 1989 |
| A semiconductor laser diode array in which the lasing elements are formed as parallel negative-index waveguides, to provide operation at higher powers and in one of two stable array modes. Lasing in interelement regions, between the lasing elements, is suppressed by the inherently low |
