| Patent Number |
Title Of Patent |
Date Issued |
| 4978923 |
Electrical measurements of the profile of semiconductor devices during their manufacturing proce |
December 18, 1990 |
| A method for measuring the width and profile of structures in a semiconductor wafer comprises the step of constructing test structures on the wafer shaped to function as moats for confining electrically conductive liquid. The moats have an elongated shape. By measuring the electrical |
| 4956611 |
Electrical measurements of properties of semiconductor devices during their manufacturing proces |
September 11, 1990 |
| A method for measuring the width of structures in a semiconductor wafer comprises the step of constructing test structures on the wafer shaped to function as moats for confining electrically conductive liquid. The moats have an elongated shape. By measuring the electrical resistance exhi |
| 4716552 |
Method and apparatus for non-destructive access of volatile and non-volatile data in a shadow me |
December 29, 1987 |
| Circuitry, including a non-volatile dynamic random access memory cell, a sense amplifier and a data latch affords non-destructive accessing and comparison of the data stored within the volatile and non-volatile portion of the memory cell. In certain applications, it is desirable to resto |
| 4672580 |
Memory cell providing simultaneous non-destructive access to volatile and non-volatile data |
June 9, 1987 |
| A memory cell providing separate storage of volatile and non-volatile data. The volatile and non-volatile data elements, which are not necessarily duplicative, can be non-destructively accessed within a single memory clock cycle via separate volatile and non-volatile bit lines. The cell |
| 4611309 |
Non-volatile dynamic RAM cell |
September 9, 1986 |
| A non-volatile dynamic RAM circuit where each memory cell includes an access transistor, a floating gate structure, and a recall transistor connected in series between an I/O bit line and a common line. A conducting plate and storage node of the floating gate structure functions as t |
| 4432008 |
Gold-doped IC resistor region |
February 14, 1984 |
| Resistive elements of semiconductor devices and integrated circuits are reduced in size thereby allowing larger scale integration. Deep level dopants including impurities or crystalline lattice defects, or both, are formed in a low resistance doped region thereby increasing the resistanc |
