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Tiezhong Ma Patents |
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Inventor: Ma; Tiezhong
Address: San Jose, CA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6683011 |
Process for forming hafnium oxide films |
January 27, 2004 |
| A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substra |
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